Electronic Resource
Copenhagen
:
International Union of Crystallography (IUCr)
Applied crystallography online
8 (1975), S. 67-68
ISSN:
1600-5767
Source:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Topics:
Geosciences
,
Physics
Notes:
This note reports on high-picture-quality computer-simulation investigation of X-ray topographs of stacking faults in silicon. The dynamical theory of X-ray diffraction including absorption has been used to generate detailed intensity information on section and traverse topographs of a perfect crystal containing an extrinsic stacking fault. An important advantage of the simulation technique is that it permits detailed comparison of the various features of the topographs with experiment.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1107/S0021889875009569
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