Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 1051-1056
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a critical analysis of both deep level transient spectroscopy and transient microwave absorption spectroscopy (MAS) for the case of DX centers in AlGaAs. We show that, even for a single level, a strongly nonexponential time dependence of the transients occurs. Our MAS experiments on Si-DX centers in Al0.3Ga0.7As extend the available data for the emission rates by more than three orders of magnitude. They are successfully interpreted by a single emission time constant using our model whereas at least three decay time constants are needed to explain the data by a pure exponential. Observed recapture processes in the neutral region of the sample underline the complexity of space charge spectroscopy in the case of the DX center.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354952
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