Publication Date:
2013-10-29
Description:
Author(s): Wen-Che Tsai, Yen-Ting Chen, Chia-Hsien Lin, Wei-Ting Hsu, Yung-Sheng Hsu, Li-Chyong Chen, Kuei-Hsien Chen, and Wen-Hao Chang The optical properties of single InGaN/GaN heterostructure nanowires (NWs) with a mean diameter down to 18 nm are investigated. Sharp emission lines originating from the recombination of localized excitons in the InGaN disk layer can be resolved. Excitation-dependent energy shifts, together with spe... [Phys. Rev. B 88, 155323] Published Mon Oct 28, 2013
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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