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  • 1
    Electronic Resource
    Electronic Resource
    Probe beam heating of AlGaAs single-quantum-well laser facets in Raman microprobe spectroscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5930-5932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The facet temperature of AlGaAs single-quantum-well laser diodes were examined via Raman microprobe spectroscopy. The facets were fabricated either by cleaving in air or by chemically assisted ion-beam etching. The ridge width was 5 μm. Large sample-dependent variations in the heating induced by the argon probe beam are observed. These variations correlate with the appearance of disorder-induced modes in the Raman spectrum and the bias current-induced heating of the laser facet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346923
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  • 2
    Electronic Resource
    Electronic Resource
    Degradation and lifetime studies of high-power single-quantum-well AlGaAs ridge lasers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 14-20 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation studies with over 235 000 device hours have been performed on single-quantum-well AlGaAs lasers with uncoated and half-wavelength Al2O3 -coated facets at stress levels ranging from below threshold up to optical power densities of 23 mW per μm facet width. The effectiveness of facet protection has been investigated with respect to gradual degradation and catastrophic failures. Facet protection is very important for obtaining long lifetimes and improved immunity to sudden catastrophic failures. With facet coatings, degradation rates as low as 0.18%/kh have been measured at 30 mW in single-lateral-mode operation and at 50 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347107
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  • 3
    Electronic Resource
    Electronic Resource
    Channeled spectrum liquid refractometer (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3028-3029 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe an experimental demonstration of a novel technique for liquid refractometry. A channeled spectrum is produced from an optical beam generated by a diode laser operating below threshold by intercepting half of the beam with a liquid cell. The spectrum is analyzed using a grating and a linear CCD array and provides information on the refractive index of the liquid. The experimental results show that accuracies of better than 0.3% in the index may be obtained with the present method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144355
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  • 4
    Electronic Resource
    Electronic Resource
    Raman microprobe study of the time development of AlGaAs single quantum well laser facet temperature on route to catastrophic breakdown (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 557-559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The facet temperature and output power of uncoated AlGaAs single quantum well lasers operated at constant current were measured as a function of time until catastrophical breakdown. The temperature rise is observed to consist of two regimes−an initial linear temperature rise accompanied by a gradual power degradation followed by a rapid nonlinear temperature rise at what appears to be a critical temperature leading to catastrophical optical damage (COD). The time to COD and the pre-COD facet temperature rise rate are found to have a strong dependence on the diode output power. This facet temperature behavior plus the data obtained from an argon laser probe beam induced heating experiment provide valuable information regarding the mechanisms leading to COD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104585
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  • 5
    Electronic Resource
    Electronic Resource
    Thermodynamics approach to catastrophic optical mirror damage of AlGaAs single quantum well lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1152-1154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time dependence of catastrophic optical damage (COD) was studied for the cw operation of AlGaAs single quantum well lasers with cleaved mirrors. An empirical rule is proposed, which yields the time for a COD failure in the form of a rate equation, containing a frequency factor and an activation energy. In this way COD is explained as a thermally activated process, depending on the mirror temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101681
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  • 6
    Electronic Resource
    Electronic Resource
    High-power fundamental mode AlGaAs quantum well channeled substrate laser grown by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1059-1061 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a high-power AlGaAs single quantum well graded-index separate confinement heterojunction laser grown by molecular epitaxy over channeled substrates. Fundamental mode operation up to 130 mW for reflection modified devices has been achieved at a high differential quantum front-facet efficiency of 81%. This device structure allows extremely low threshold currents to 6 mA for power lasers due to the incorporation of lateral current blocking pn junction by crystallographic plane-dependent doping of amphoteric dopants. We obtained a very high-power continuous-wave fundamental mode operation of this type of laser at extremely low threshold currents and very high overall efficiency of more than 50%. This laser shows considerable potential for applications in optical storage and printer technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101704
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetism and colossal magnetoresistance in the compound Sr14MnSb11 : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7192-7194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization and resistivity of single crystals of the ferromagnetic compound Sr14MnSb11 are measured as functions of magnetic field, temperature, and crystal orientation. The uniform magnetic susceptibility is used to identify TC=39 K. The ferromagnetic state is found to have a hard axis (c axis) anisotropy. The resistivity data place the compound in the class of colossal magnetoresistance (CMR) materials such as Ca-doped LaMnO3. The data are also compared to the related CMR material Eu14MnSb11. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367794
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  • 8
    Electronic Resource
    Electronic Resource
    Onset of subharmonics generated by forward wave interactions in Bi12SiO20 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1602-1604 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The threshold conditions, under which a spatial subharmonic beam may arise when a Bi12SiO20 crystal is illuminated by two pump beams, are investigated. It is shown that a nonlinear theory based on the material equations leads to good qualitative agreement with experiments
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104132
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of bandwidth limitations on the localized state distribution calculated from transient photoconductivity data (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4782-4787 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possible effects of experimental bandwidth limitation on the accuracy of the energy distribution of the density of localized states (DOS) calculated from transient photoconductivity data by the Fourier transform method is examined. An argument concerning the size of missing contributions to the numerical Fourier integrals is developed. It is shown that the degree of distortion is not necessarily large even for relatively small experimental bandwidths. The density of states calculated from transient photodecay measurements in amorphous arsenic triselenide is validated by comparing with modulated photocurrent data. It is pointed out that DOS distributions calculated from transient photoconductivity data at a high photoexcitation density are valid under certain conditions. This argument is used to probe the conduction band tail in undoped a-Si:H to energies shallower than 0.1 eV below the mobility edge. It is concluded that there is a deviation in the DOS from exponential at about 0.15 eV below the mobility edge. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367270
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  • 10
    Electronic Resource
    Electronic Resource
    Stepwise-graded-index multilayer broadband low-reflectivity coating for AlGaAs/GaAs power lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 942-944 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a new type of optical low-reflectivity coating and its application to GaAs/AlGaAs power lasers. The low-reflectivity region of this coating extends over a broad wavelength range, therefore making the overall reflectivity much less sensitive to thickness variations as compared to single-layer coatings. In addition, only two materials (SiO2 and a-Si:H) are required, thus making it very easy to fabricate such coatings with standard deposition techniques such as plasma-enhanced chemical vapor deposition (PECVD) or ion beam sputtering. Finally, the optical quality of coatings deposited by PECVD was confirmed by measurements on power lasers, showing optical power outputs in excess of 60 W/mm, among the highest reported value for coated mirrors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102453
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