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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic structures and interactions in Ho/Y, Ho/Lu, and Ho/Er superlattices (invited) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6274-6277 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ho/Y and Ho/Er superlattices have been grown by molecular-beam epitaxy using a Balzers UMS 630 instrument. The superlattices were grown on a sapphire substrate with an Nb buffer and Y seed layer. X-ray-diffraction techniques were used to characterize the crystallographic structure and neutron-diffraction techniques to determine the magnetic structures. The results for the Ho/Y systems were consistent with long-range order being formed coherently through the whole superlattice. The moments in the Ho layers were aligned in the basal plane and most of the structures could be described by helical structures with a turn angle between holmium planes of ΨH and between nonmagnetic Y planes ΨY. ΨY is found to be largely independent of temperature or superlattice, while ΨH decreases with decreasing temperatures and at low temperatures takes a commensurate value, so as to take advantage of the basal plane anisotropy. The results for the Ho/Er superlattices differ because the Er has a magnetic moment and the anisotropy favors alignment along the c axis. Between the ordering temperature of bulk Ho and bulk Er, the results are similar to those of the Ho/Y superlattices. The ordering propagates through the Er layers but the Er moments are not ordered. At lower temperatures the Er moments order in a cycloidal (a/c) structure with the basal plane components having fairly long-range coherence with the Ho moments, but the c-axis components having no coherence from one Er layer to the next.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358303
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  • 2
    Electronic Resource
    Electronic Resource
    Structure of niobium thin films on sapphire (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2195-2197 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of Nb thin films grown by molecular beam epitaxy on sapphire has been studied using high-resolution x-ray scattering techniques. Transverse scans of the x-ray wave vector transfer through the (110)Nb Bragg peak show diffuse scattering with a Lorentzian-squared profile, and satellite Bragg peaks for certain orientations of the crystal. The former feature arises from a random, two-dimensional network of Nb domains, and the latter from a periodic distortion of the Nb films at the terrace edges of the vicinal sapphire substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110551
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  • 3
    Electronic Resource
    Electronic Resource
    X-ray diffraction techniques for the analysis of epitaxic thin films (1975)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 8 (1975), S. 545-556 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The use of X-ray diffraction for identification and analysis of thin epitaxic layers, grown on a single-crystal substrate of alien material, is often complicated by the predominant diffraction of the substrate, which may obscure that of the layer, and the incidence of `substrate-imposed' twinning. Techniques have been devised whereby control of the incident radiation spectrum and the angles of diffraction enables the X-ray diffraction pattern of the layer to be enhanced. Information concerning the identity of the material and its orientation with respect to the substrate surface is readily obtained, followed by analysis of the epitaxic relationships and twinning modes. The use of X-ray intensity data is discussed, with particular reference to the determination of crystallographic polarity, and a method for the precise measurement of the lattice parameter of thin films is presented, which is applicable to the characterization of solid solutions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889875011235
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  • 4
    Electronic Resource
    Electronic Resource
    A high-resolution X-ray topographical technique for thin flexible crystal plates (1975)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 8 (1975), S. 281-286 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A new technique for high-resolution X-ray diffraction topography is described, which is specially applicable to the examination of thin crystal slices of large area in symmetric transmission. The crystal plate is slightly curved so that the whole area can selectively diffract a single wavelength from an X-ray beam divergent from a distant point source. For the case of symmetric transmission, image contrast is identical to that obtained from the conventional Lang technique. Resolution equivalent to that of the Lang technique is obtained in a small fraction of the exposure time. The method is restricted to materials in which the defect distribution is not strongly dependent on macroscopic strain. The method is illustrated by application to silicon crystals used in semiconductor device manufacture. Process-induced curvature can to some extent be compensated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889875010461
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  • 5
    Electronic Resource
    Electronic Resource
    A topotactic reaction between nickel and gallium arsenide (1973)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 6 (1973), S. 425-428 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: During the fabrication of a Schottky barrier diode for use at microwave frequencies a thin layer of nickel is evaporated on to a gallium arsenide crystal followed by an evaporated layer of gold. During the bonding of contacts to the base of the crystal, a temperature approaching 400 °C is reached. It has been demonstrated that a reaction takes place between the gallium arsenide and the evaporated layers resulting in the formation of a monocrystalline layer of nickel arsenide in a topotactic relationship to the substrate and an ordered alloy of gold and gallium. A number of X-ray diffraction techniques have been employed to analyse the reaction products and identify the topotactic relationships for substrates of both 〈001〉 and 〈111〉 orientation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889873009167
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  • 6
    Electronic Resource
    Electronic Resource
    An X-ray cylindrical texture camera for the examination of thin films (1975)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 8 (1975), S. 255-260 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: An X-ray cylindrical texture camera has been constructed for the examination of thin polycrystalline films. Information about the type and degree of preferred orientation can be obtained. In certain cases the thickness of the film can be measured, and the order of deposition determined where more than one layer is present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889875010424
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  • 7
    Electronic Resource
    Electronic Resource
    Dissolution and crystallization of KTiOPO4 in the flux system of K6P4O13 (1998)
    Springer
    Journal of materials science 9 (1998), S. 255-260 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The crystallization temperatures of KTiOPO4(KTP), KTP : Nb and RbTiOPO4(RTP) in the flux systems, K6P4O13 (K6) or Rb6P4O13 (R6), were determined by thermogravimetric analysis. The systems have a large tendency to supercool, which could be greatly reduced by the top-seeding technique. Seed-testing experiments were used to study the dissolution kinetics. The diffusion equation under steady state conditions was used to derive an expression for the seed dissolution, which enables one to introduce the diffusion activation energy and the diffusion rate parameter from the experimental data. Consequently, the stable growth rate and the cooling programme for the crystal growth can be estimated. The stable growth rate decreases with temperature and is in the order of 0.1 mm day-1 in unstirred solutions. The optimal cooling rate curve, however, goes through a maximum as the temperature falls. A stable growth rate and suitable supercooling are essential for the growth of large single crystals of high quality. © 1998 Chapman & Hall
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008874906569
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of metal films on corundum substrates (1977)
    Springer
    Journal of materials science 12 (1977), S. 577-582 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Gold layers on corundum, α-Al2O3, substrates, with intermediate sputtered copper and chromium layers, are used for microwave integrated circuit applications. The existance of “islands” of monocrystalline Au and Cu in otherwise polycrystalline material has been verified using X-ray and electron diffraction techniques. In these monocrystalline regions, a discrete Cr layer, under the Au and Cu layers, is no longer present. Investigations on specially prepared samples established the monocrystalline Cu to be a twinned epitaxic layer with (111)Cu//(0001)α-Al2O3; [¯1¯12] Cu//[2¯1¯10]α-Al2O3. In a sample consisting of a single Cr layer on α-Al2O3, the Cr was found to be epitaxic with (110) Cr//(0001)α-Al2O3. Epitaxic “islands” are detrimental to device performance, and their formation has been suppressed by reducing the sputtering power density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00540283
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  • 9
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    Engineering coercivity in epitaxially grown (110) films of DyFe2–YFe2 superlattices (2000)
    American Institute of Physics
    Details
    Publication Date: 2000-07-24
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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  • 10
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    Spin-flop transition driven by exchange springs in ErFe2∕YFe2 multilayers (2007)
    American Institute of Physics
    Details
    Publication Date: 2007-05-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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