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  • 1
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 140 (1937), S. 768-769 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] FROM recent work on group and thermal neutrons1, the constants describing the resonance absorption of an element can be calculated fairly accurately. This simplifies the estimation of the average spacing of the resonance neutron levels in the experiment of Chao and ...
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Ground water 22 (1984), S. 0 
    ISSN: 1745-6584
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Geosciences
    Notes: An abandoned creosote facility in Conroe, Texas, has become a field site for the National Center for Ground Water Research (NCGWR) at Rice University. Ground-water contamination in the shallow aquifer beneath the site was characterized by sampling soils and water quality at 14 monitoring wells and 35 boreholes.Results from six sampling trips over two years for inorganic and organic chemical concentrations in the ground water show wells around the site were contaminated to levels above 800 μg/l for naphthalene, 400 μg/1 for methyl naphthalene, and 150 μg/1 for dibenzofuran. Conservative constituents, traced by chloride concentrations up to 75 mg/l, have migrated 300 ft (90 m) downgradient of the site. Organic contaminants have been adsorbed and microbially degraded in their migration from the waste source as evidenced by their attenuated concentrations. Detailed field pump tests have been performed to evaluate hydraulic conductivity at several of the shallow wells. The U.S. Geological Survey (USGS) Solute Transport Model (Konikow and Bredehoeft, 1978) has been used to predict chloride plume patterns and evaluate parameters which govern transport processes at the Conroe waste site.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 634-636 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A parallel dot structure, which is not conductively coupled but capacitively coupled, is fabricated. Both of the respective single dots show clear Coulomb blockade oscillations (CBOs) as their gate voltages are scanned. Single-electron charging in one dot causes oscillations of the current through another dot, even in the regime of more negative gate voltages where the CBOs cannot be observed due to a too weak current. In addition, information on the energy levels in one dot can be obtained. © 2001 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1537-1539 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-semiconductor-metal diode devices are fabricated with InAs self-assembled quantum dots (QDs). Both hysteresis loops and staircases are observed in the I–V characteristics, which are analyzed by employing the ideality factor of the Schottky contacts. The charging and discharging of the InAs QDs induce the hysteresis loops, resonant tunneling through the energy levels of QDs gives rise to the staircases. The charging effect is found to be weakened by the resonant tunneling, and the resonant tunneling cannot be observed in the voltage range where the loops are most pronounced. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2160-2162 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the operation of Si single-electron transistors with in-plane point-contact metal gates. These in-plane gates are fabricated by a self-aligned process, which are used to squeeze the channel and to form a single dot at the constriction of the channel. The characteristics of such single-electron transistors strongly depend on the channel width and the voltage of the in-plane gates. A few dips are observed at the less positive gate voltages for a device with a 70 nm wide channel. Applying negative voltages to the in-plane gates leads to the formation of a single dot in the conducting channel. These in-plane gates facilitate fabricating Si single-electron transistors with single dot structures. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 406-408 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of a finite drain voltage and a finite temperature on coherent transport in the single electron tunneling regime are investigated for a novel quantum dot structure defined by two shallow etched trenches and two line Schottky gates. A regular amplitude modulation of Coulomb blockade oscillations is observed and attributed to coherent resonant transport. Increasing drain voltage disturbs the amplitude modulation more significantly than raising the temperature. This is explained in terms of the effects of nonmonochromatic electrons on the interference condition. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1149-1151 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated photoluminescence of double-barrier diodes under various bias voltages and observed the saturation of the broadening of the photoluminescence lines. We have also studied the integrated photoluminescence intensity with increasing applied voltages near resonant voltages for high quality samples at low temperature (4.2 K). The results of the 77 K photoluminescence experiments confirm those at 4.2 K. The saturation of the broadening is due to weak hole localization; however, the saturation of the integrated photoluminescence intensity is mainly due to reduced nonradiative recombination. Our results suggest that the hole localization may arise from interface roughness.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2499-2501 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on single electron transport through an asymmetric double dot structure with well-defined dot potential profiles. As the two dots are coupled, the conductance exhibits two pronounced types of Coulomb blockade oscillations. An analysis of the small short-period oscillations indicates the presence of interdot interaction. When the coupling strength is reduced, the oscillations become few irregular peaks but they develop into periodic oscillations again as the drain voltage is increased to 0.6 mV. This appearance with increasing drain voltage is well explained by our model which is based on the stochastic Coulomb blockade model and nonresonant tunneling. © 1997 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 14 (1949), S. 0 
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 35 (1979), S. 223-225 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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