Publication Date:
2014-10-22
Description:
Article Impurities in molybdenum disulfide are known to reduce charge mobility to below its intrinsic limit. Here, the authors demonstrate that impurities are associated with lattice defects and that a chemical route can repair sulfur vacancies and improve interface quality with a substrate, enhancing device performance. Nature Communications doi: 10.1038/ncomms6290 Authors: Zhihao Yu, Yiming Pan, Yuting Shen, Zilu Wang, Zhun-Yong Ong, Tao Xu, Run Xin, Lijia Pan, Baigeng Wang, Litao Sun, Jinlan Wang, Gang Zhang, Yong Wei Zhang, Yi Shi, Xinran Wang
Electronic ISSN:
2041-1723
Topics:
Biology
,
Chemistry and Pharmacology
,
Natural Sciences in General
,
Physics
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