ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
La3Ga5SiO14 (LGS) thin films were grown on (200)-textured MgO buffer layer, whichwas deposited on the silicon wafer, by sputtering at 600°C. These thin films were annealed andtransformed form amorphous to the LGS crystalline phase with the heat treatment temperaturehigher than 1150°C. It was found that the films with LGS crystalline phase showed luminescentcharacterization whereas the LGS sintered solids did not. The emission peak of the films wasfound to be 438 nm under the excited light of λex=300nm. Effects of annealed temperature on theluminescent properties of the thin films are investigated. The relationship between the mechanismof luminescence and the crystalline structure of the LGS films are discussed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.539-543.3514.pdf
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