Publication Date:
2016-05-24
Description:
CeO 2 films were prepared at deposition temperature ranged from 947 to 1096 K (corresponding laser power was from 52 to 185 W) on (100) LaAlO 3 single crystal substrate by laser chemical vapor deposition. At deposition temperature of 1027–1096 K (laser power was from 115 to 185 W), highly (100)-oriented CeO 2 films with wedge-caped columnar grains were prepared, whose epitaxial growth relationship was CeO 2 [100]//LAO [100] (CeO 2 [010]//LAO [011]). Their full width at half maximum of the ω-scan on the (200) reflection and that of the ϕ-scan on the (220) reflection were 0.8°–1.8° and 0.7°–1.2°, respectively. The highest deposition rate at which CeO 2 film with pure (100) preferred orientation could be obtained was 30 μm h −1 .
Print ISSN:
0002-7820
Electronic ISSN:
1551-2916
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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