Publikationsdatum:
2014-07-08
Beschreibung:
A high performance RF (radio-frequency) switch based on the phase change effect in germanium-telluride (GeTe) is described. Thermal pulses applied to a separate independent thin film heating element for 0.1–1.5 μ s toggles the switch in a latching fashion. Being non-volatile, no power is required to hold the switch in the on- or off-state. State-of-the-art solid-state RF switches currently in use have an on-state loss of 1 dB; here, we demonstrate an inline phase change switch with a low on-state resistance showing over a frequency range of 0-40 GHz an insertion loss of just 0.1–0.24 dB.
Print ISSN:
0003-6951
Digitale ISSN:
1077-3118
Thema:
Physik
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