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  • 1
    Electronic Resource
    Electronic Resource
    Ethyliodide n-type doping of Hg1−xCdxTe (x=0.24) grown by metalorganic molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2836-2838 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductive n-type Hg1−xCdxTe epitaxial layers with x=0.24 were grown by metalorganic molecular beam epitaxy using iodine doping. Ethyliodide was chosen as the dopant precursor based on previous results obtained for CdTe. The low-temperature (20 K) electron concentration increased from an undoped level of ∼1015 cm−3 to 5×1018 cm−3 for ethyliodide flow rates from 10−4 to 10 sccm. High electron mobilities were measured and secondary ion mass spectrometry measurements indicated a high degree of electrical activity. These results demonstrate that iodine is a highly effective n-type dopant for long-wavelength HgCdTe alloys and device structures. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112535
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence properties of ZnS epilayers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2803-2809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive study is reported of the photoluminescence properties of ZnS thin films between 1.6 and 320 K grown by metalorganic molecular beam epitaxy and chemical beam epitaxy on GaAs substrates. Both heavy- and light-hole free excitons were observed at low temperatures with linewidths of 7.0 and 5.3 meV, respectively, as well as donor- and acceptor-bound excitons and free-to-bound recombination along with their longitudinal optical (LO) phonon replicas. The free exciton emission was observed up to 320 K, and enabled the room temperature band gap of ZnS to be unambiguously determined as 3.723 eV. The temperature dependence of the peak position, intensity, and linewidth was well described by the conventional empirical relations and by Toyozawa's exciton line shape theory. The bound exciton peak positions were found to follow the temperature dependence of the band gap whereas the free-to-bound recombination feature was displaced by (1/2)kT above the band gap energy. Thermal quenching of the donor-bound exciton was described by a one-step quenching process with an activation energy of 14.4 meV. The self-activation (SA) center was also observed at 2.846 eV with a linewidth of 410 meV. The temperature dependence of the SA emission was well described by the configuration coordinate model. From the thermal broadening of the SA emission, an average phonon energy of 47.5 meV was determined, in good agreement with the LO phonon energy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363937
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence properties of ZnGa2O4:Mn powder phosphors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5691-5695 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of a systematic photoluminescence study of ZnGa2O4:Mn powder phosphor are reported. At room temperature this phosphor exhibits bright green luminescence with a spectral peak at 2.46 eV and Commission International de l'Eclairage chromaticity coordinates of x=0.073 and y=0.696. At low temperatures the luminescence was found to consist of three components assigned to the 4T1–6A1 inner transition of the 3d electrons of Mn2+ ions located on three different sites of the host crystal. Selective excitation and lifetime measurements were used to investigate the assignment of these features. The photoluminescence lifetime showed a single exponential decay of about 4 ms and at T=1.6 K an optical-phonon-related fine structure [Ephonon=(8.2±0.2) meV] of the main photoluminescence line was observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359627
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  • 4
    Electronic Resource
    Electronic Resource
    Multilayer stacked electroluminescent devices (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2860-2862 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A device concept, the multilayer stacked electroluminescent device is presented. This device consists of a series of double insulating-layer electroluminescent units stacked up on top of one another, separated by transparent electrodes and alternately biased in opposite directions. This unique design allows independent control of the drive voltage and the total phosphor thickness. The drive voltage depends only on the individual phosphor layer thickness while the total phosphor thickness, and thus the total brightness, can be increased by increasing the number of layers. The anticipated enhancement in brightness was predicted by equivalent circuit analysis and demonstrated by prototype devices fabricated by atomic layer epitaxy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124038
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  • 5
    Electronic Resource
    Electronic Resource
    Saturation effects in Y2SiO5:Tb under low-voltage excitation (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 949-951 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-voltage field emission device phosphors that are excited at high current densities often exhibit brightness saturation with increasing current. The physical processes responsible for saturation can be complex, with several mechanisms contributing, including ground state depletion and excited energy transfer. A two-level model, in conjunction with cathodoluminescence brightness and transient measurements, is used to show the influence of ground state depletion and thermal quenching on the saturation behavior of Y2SiO5:Tb under low-voltage excitation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125901
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  • 6
    Electronic Resource
    Electronic Resource
    Green phosphor for low-voltage cathodoluminescent applications: SrGa2S4:Eu2+ (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 158-160 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical and physical properties of a low-voltage phosphor, SrGa2S4:Eu2+, are reviewed. This phosphor has excellent chromaticity and high luminous efficiency at excitation voltages 〈3 kV and at high drive current (∼100 μA/cm2). At high current densities this phosphor was found to have superior saturation properties compared to current phosphors. This is attributed to the fast decay time of this phosphor, which is expected to enhance its resistance to saturation. Recent studies show that this phosphor has good maintenance properties. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120674
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  • 7
    Electronic Resource
    Electronic Resource
    Low voltage cathodoluminescence properties of blue emitting SrGa2S4:Ce3+ and ZnS:Ag,Cl phosphors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2226-2228 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low voltage properties of ZnS:Ag and SrGa2S4:Ce3+ have been investigated for applications in field emission displays. It was observed that although ZnS:Ag,Cl has slightly better chromaticity than SrGa2S4:Ce3+, the high luminous efficiency, fast decay time, and better saturation behavior of the thiogallate potentially make it a very important blue phosphor. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121266
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  • 8
    Electronic Resource
    Electronic Resource
    Luminescence decay kinetics in homogeneously and delta-doped ZnS:Mn (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6852-6858 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The luminescence decay kinetics of homogeneously and delta-doped ZnS:Mn thin film phosphors was investigated. A quantitative model based on the hopping model of energy transfer theory was developed to described the concentration quenching phenomenon in ZnS:Mn. The model predicted the dependence of the energy transfer rate on material parameters such as the Mn and defect concentrations. The luminescence decay of homogeneously doped ZnS:Mn consisted of two exponential components at 10 K. The fast component of 120 μs was attributed to exchange-coupled pair emission and the slow component of 1.6 ms to isolated Mn ions. As the temperature was increased, the exchange-coupled pair emission disappeared and the decay became strongly nonexponential. The nonexponentiality was attributed to nonradiative energy transfer processes. The concentration dependence of the effective lifetime was also found to change with temperature. The investigation on the temperature dependence revealed two regimes of concentration which showed distinct temperature dependencies. From the temperature dependence, it was concluded that the energy transfer between Mn ions was active only when the Mn concentration was greater than 2 at. %. By comparing these results with the results of Dexter's theory, the energy transfer between Mn ions was found to be mediated by an electric dipole–dipole interaction. The delta-doped ZnS:Mn showed faster decay times due to the enhanced overlap between 3d and s-p host states caused by lattice strain. From the temperature dependence, a two-dimensional confinement of energy transfer was observed when the doping planes were far apart. However, when the doping planes were brought close together, the delta-doped samples behaved similarly to the homogeneously doped ZnS:Mn indicating that the energy transfer was no longer two-dimensionally confined. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368980
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  • 9
    Electronic Resource
    Electronic Resource
    The tunnel thin film electroluminescent device (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 234-236 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new electroluminescent device concept is proposed to achieve low voltage operation. The device is based on a lattice matched semiconductor/insulator/luminescent layer/insulator/semiconductor structure in which, under bias, electrons are injected from the semiconductor into the electroluminescent layer at high energy. This tunnel thin film electroluminescent device is integrable with silicon and suitable for use in very low voltage, high brightness electroluminescent displays. Preliminary results indicate operation as low as 15 V with a peak brightness of 22 fL at 24 V. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118376
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  • 10
    Electronic Resource
    Electronic Resource
    Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1764-1766 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDs, and to both electron and hole ionization in the conventional APDs. For the doped MQW APDs, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113360
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