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  • 1
    Electronic Resource
    Electronic Resource
    Metabolic effects of oral salbutamol in late pregnancy (1978)
    Springer
    European journal of clinical pharmacology 14 (1978), S. 95-99 
    Details
    ISSN: 1432-1041
    Keywords: Salbutamol ; metabolic effects ; cyclic AMP ; β-adrenergic agonist ; pregnancy ; carbohydrate metabolism ; lipid metabolism
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary Ten women in late pregnancy were given an oral dose of salbutamol 4 mg. Heart-rate and blood-pressure were recorded and blood-samples for measurement of cyclic AMP, C-peptide, glucose, lactate, glycerol, non-esterified fatty acids (NEFA) and β-hydroxybutyrate (3-HB) were collected every 30 min for 120 min. In seven of the women the same experiment was performed without the salbutamol. After salbutamol maternal heart-rate was significantly increased at 30 and 90 min, and diastolic blood-pressure was significantly decreased between 30 and 120 min; systolic blood-pressure was unaltered. Plasma cyclic AMP was significantly increased by salbutamol at 30 and 120 min and C-peptide at 60 min. Plasma glucose was significantly elevated 60 min after salbutamol and glycerol after 90 min. Plasma NEFA and 3-HB increased both with and without the drug, with a tendency towards higher levels in the group that received salbutamol. Lactate levels were unchanged after salbutamol and fell when the drug was not given, but the difference was not significant. The results show clear circulatory and metabolic effects of a single clinical dose of salbutamol.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00607438
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  • 2
    Electronic Resource
    Electronic Resource
    Field Aligned Strata in the Ionization above the Ionospheric F 2 Layer (1963)
    [s.l.] : Nature Publishing Group
    Nature 198 (1963), S. 230-233 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] IN a previous article1 we reported the results of preliminary analysis of the electron density data from the satellite Ariel 1. This analysis indicated that in the topside ionosphere, in the geocentric altitude range from 400 to 1,200 km, the electron density does not everywhere decrease ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/198230a0
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  • 3
    Electronic Resource
    Electronic Resource
    Evidence for a Further Ionospheric Ledge Above the F 2 Region (1962)
    [s.l.] : Nature Publishing Group
    Nature 195 (1962), S. 1143-1145 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] SATELLITE Ariel1, which was launched from Cape Canaveral on April 26, 1962, carries instrumen tation to measure the local ionization density along the path of the satellite. These data are stored point by point along each orbit by a tape recorder on board the satellite, and relayed by fast ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/1951143a0
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical characterization of transparent p–i–n heterojunction diodes (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5763-5767 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent p–i–n heterojunction diodes are fabricated using heavily doped, p-type CuYO2 and semi-insulating i-ZnO thin films deposited onto a glass substrate coated with n-type indium tin oxide. Rectification is observed, with a ratio of forward-to-reverse current as high as 60 in the range −4–4 V. The forward-bias current–voltage characteristics are dominated by the flow of space-charge-limited current, which is ascribed to single-carrier injection into the i-ZnO layer. Capacitance measurements show strong frequency dispersion, which is attributed to i-ZnO traps. The diode structure has a total thickness of 0.75 μm and an optical transmission of ∼35%–65% in the visible region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413710
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  • 5
    Electronic Resource
    Electronic Resource
    Electroluminescence thermal quenching in alternating-current thin-film electroluminescent devices (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2185-2190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescence (EL) thermal quenching in alternating-current thin-film electroluminescent (ACTFEL) devices refers to a reduction in the luminance with increasing temperature, which is in excess to that of normal thermal quenching and is concomitant with a reduction in the transferred charge. A comparison of thermal quenching trends for ZnS:Mn, SrS:Ce, SrS:Cu,Ag, and multilayer SrS:Cu,Ag/SrS:Ce ACTFEL devices is presented. Respectively, ZnS:Mn; SrS:Cu and SrS:Cu,Ag; and SrS:Ce and multilayer SrS:Cu,Ag/SrS:Ce ACTFEL devices exhibit very little (normal), a large amount (of primarily EL), or a small amount (of primarily normal) thermal quenching. Insertion of one or more interface layers of SrS:Ce significantly reduces the extent of EL thermal quenching in a SrS:Cu,Ag ACTFEL device. Simulation suggests that SrS:Ce interface layers decrease the rate and displace the location of hole creation by band-to-band impact ionization away from the SrS:Cu,Ag layer, where hole trapping at Cu or Ag acceptor sites leads to EL thermal quenching via thermally activated annihilation of positive space charge due to thermionic emission of holes from Cu or Ag acceptor traps. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385570
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  • 6
    Electronic Resource
    Electronic Resource
    ELECTRICAL CHARACTERIZATION OF THIN-FILM ELECTROLUMINESCENT DEVICES (1997)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 27 (1997), S. 223-248 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electrical characterization methods for the analysis of alternating current thin-film electroluminescent (ACTFEL) devices are reviewed. Particular emphasis is devoted to electrical characterization techniques because ACTFEL devices are electro-optic display devices whose performance is to a large extent determined by their electrical properties. A systematic procedure for ACTFEL electrical assessment is described. The utility of transient charge, voltage, current, and phosphor field analysis is explained. Steady-state electrical characterization methods discussed in this review include charge-voltage (Q-V), capacitance-voltage (C-V), internal charge-phosphor field (Q-Fp), and maximum charge-maximum applied voltage (Qmax-Vmax) analysis. These electrical characterization methods are illustrated by reviewing relevant results obtained from the analysis of evaporated ZnS:Mn and atomic layer epitaxy (ALE) SrS:Ce ACTFEL devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.matsci.27.1.223
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  • 7
    Electronic Resource
    Electronic Resource
    Evidence for space charge in atomic layer epitaxy ZnS:Mn alternating-current thin-film electroluminescent devices (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 296-299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and optical measurements of ZnS:Mn alternating-current thin-film electroluminescent (ACTFEL) devices grown by atomic layer epitaxy provide evidence for the existence of space charge within the bulk ZnS layer. Blue luminescence is observed during the falling edge of an applied voltage pulse when the ACTFEL device is operated at low temperature. This blue luminescence is attributed to donor-acceptor pair radiative recombination in which chlorine is identified as the donor and a zinc vacancy as the acceptor. This luminescence identification leads to determination of the origin of space charge as arising from impact ionization of the zinc vacancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353903
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  • 8
    Electronic Resource
    Electronic Resource
    Modeling space charge in alternating-current thin-film electroluminescent devices using a single-sheet charge model (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4668-4680 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simulation of alternating-current thin-film electroluminescent device operation with positive space charge present in the phosphor layer of the device is presented. The simulation is based on modeling the space-charge distribution using a single-sheet charge model. The simulation is performed for two cases of space-charge creation: by impact ionization of deep levels in the phosphor or by field emission from traps in the phosphor. Results of the simulation show that space-charge creation by either mechanism is capable of causing overshoot in both capacitance-voltage and internal charge-phosphor field (Q-Fp) plots. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359814
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  • 9
    Electronic Resource
    Electronic Resource
    Space charge generation in ZnS:Mn alternating-current thin-film electroluminescent devices (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5775-5781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of ZnS:Mn alternating-current thin-film electroluminescent (ACTFEL) devices grown by atomic layer epitaxy are assessed as a function of the thickness of the phosphor layer using capacitance-voltage (C-V) and internal charge-phosphor field (Q-Fp) analysis. Deviations from the ideal in the measured C-V and Q-Fp characteristics are ascribed to the generation of space charge in the phosphor layer during ACTFEL device operation. C-V overshoot deviations are correlated to space charge generation via a simulation employing a single sheet of charge model which assumes that the centroid of the generated space charge is located at a discrete sheet within the phosphor. Space charge generation in these atomic layer epitaxy (ALE) ZnS:Mn ACTFEL devices is ascribed to impact ionization of the zinc vacancy portion of chlorine-zinc vacancy self-activated defect complexes. A thermodynamic argument is provided which suggests that zinc vacancies are created via self-compensation of ZnS when the ZnS is unintentionally doped with chlorine. It is contended that space charge generation could even be desirable in ALE ZnS:Mn ACTFEL devices because it leads to better aging stability and improved performance. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359640
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  • 10
    Electronic Resource
    Electronic Resource
    Hot-electron impact excitation of ZnS:Tb alternating-current thin-film electroluminescent devices (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2101-2104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method of performing hot-electron impact excitation experiments using alternating-current thin-film electroluminescent (ACTFEL) devices is reported. This method relies on the use of a field-control circuit to control the magnitude of the phosphor field and consists of plotting the intensity of a given electroluminescence transition, normalized by the amount of conduction charge which flows while the field-control circuit is asserted (the electroluminescence intensity of a given transition divided by the conduction charge is denoted the impact excitation quantum yield ηie), as a function of the phosphor field Fp. ηie vs Fp is measured for ZnS:Tb ACTFEL devices fabricated by atomic layer epitaxy (ALE) and by sputtering. ηie exhibits a threshold at approximately 0.5 MV/cm and saturation at approximately 1.5 MV/cm. The magnitude of ηie for the ALE ACTFEL device depends strongly on temperature; in contrast, ηie for the sputtered ACTFEL device is virtually temperature independent. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360188
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