ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC MESFETs were fabricated using a bilayer dry thermal oxide/low-pressurechemical vapor deposited (LPCVD) silicon nitride for surface passivation. The passivationdielectric consists of a 20 nm thick dry thermal oxide covered by a 45 nm thick LPCVD siliconnitride layer. Devices utilize a recessed-channel architecture with 0.6 micron T-gates. Devices withthe bilayer SiO2/SiNx passivation achieved a ft=9.3 GHz and fmax=15.5 GHz (WG=1.5 mm). Thedevice transconductance was 34 mS/mm, drain current density was 235 mA/mm, and pinchoffvoltage was –8V. Devices were load-pull characterized at 3 GHz with a 10% duty cycle and 100 μsrepetition rate and a Class AB quiescent bias of IDS=100 mA/mm, and VDS=30V. Large deviceswith a 9.6 mm gate-periphery deliver an output power of 43.2 dBm (20.9 W=2.2W/mm) with apower-added-efficiency of 59% at a gain of 8.8 dB
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1239.pdf
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