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  • 1
    Electronic Resource
    Electronic Resource
    Heteroepitaxy and characterization of Ge-rich SiGe alloys on GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8164-8167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of SiGe alloys on GaAs substrates at temperatures as low as 590 °C is described. The growth has been accomplished using the pyrolysis of disilane (Si2H6) and germane (GeH4) at such temperatures. The layers were characterized electrically and show n-type conduction with carrier concentrations of ∼1×1018 cm−3. The high quality of the SiGe layers is evident in the Rutherford-backscattering/channeling results on SiGe/GaAs structures. A χmin of 5.6% has been obtained for a Si0.05Ge0.95 layer on GaAs. χmin increases with increasing silicon content in the SiGe layers. The SiGe alloy layers were also studied by x-ray diffraction, and the composition was determined assuming coherent, tetragonally distorted growth of SiGe on GaAs. The distortion calculations, based on theoretical elastic constants, were confirmed using Auger electron spectroscopy to determine alloy composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347471
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxy of germanium using germane in the presence of tetramethylgermanium (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5662-5664 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial germanium (Ge) growth from germane (GeH4) has been investigated in the presence of organometallic tetramethylgermanium (TMGe) in the temperature range of 675–825 °C. Under the growth conditions employed, the growth of Ge is essentially mass-transport limited with an optimum growth temperature of 725 °C. The presence of TMGe does not increase Ge growth rates but lowers background-carrier concentrations in undoped n-type Ge layers. This reduction in background-carrier concentration is more pronounced at higher growth temperatures. In addition, the presence of TMGe yields more abrupt p+-n junctions, possibly suggesting the formation of more "defect-free'' epitaxial growth of Ge from GeH4 and reduced boron diffusion into n-Ge layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343633
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  • 3
    Electronic Resource
    Electronic Resource
    Improved photoluminescence of GaAs in ZnSe/GaAs heterojunctions grown by organometallic epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1308-1310 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc selenide layers, grown by organometallic vapor phase epitaxy on gallium arsenide, are shown to improve the photoluminescence intensity of the gallium arsenide. The improvement in the room-temperature photoluminescence intensity is found to be as high as 190, for n-type GaAs covered with an 1100 A(ring) ZnSe layer. An improvement of 145 was observed for p-type GaAs covered by a ZnSe layer of the same thickness. No such improvement is seen for ZnSe thicknesses exceeding 1500 A(ring), the calculated critical thickness for this heterojunction. The effective recombination velocity is estimated to be approximately 1×103 cm/s for the GaAs-ZnSe interface, with thin ZnSe layers. Different epitaxial structures were used to check the consistency of the calculations, and the results match reasonably well. Our findings suggest that the behavior of the ZnSe/GaAs heterojunction is similar to the AlGaAs/GaAs heterojunction. This presents the possibility of its use in GaAs device, where it should offer some advantages over the existing structures using AlGaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100005
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  • 4
    Electronic Resource
    Electronic Resource
    A stochastic model for crystal-amorphous transition in low temperature molecular beam epitaxial Si (111) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6219-6222 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxial Si (111) grown below a certain temperature result in amorphous structure due to the limited surface mobility of atoms in finding correct epitaxial sites. In spite of many experimental and theoretical studies, the mechanism of crystal-amorphous transition and its dynamics related to the growth conditions are not well understood. In this article, we present a theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition of the layer. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures in the range of 500–900 K and growth rate in the range of 0.1–3.0 A(ring)/s. The agreement between our results and experimental observations is excellent. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363698
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence of porous silicon buried underneath epitaxial GaP (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 889-891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent observations of visible, room-temperature photoluminescence in porous Si have stimulated research aimed at the realization of efficient, Si-based electroluminescent devices. To achieve electroluminescence, it may be beneficial to generate carriers with sufficient energy to populate the states of the quantum-confined Si structures. A viable method to accomplish this is to utilize a wide-band-gap heterojunction injector, such as GaP. Toward that end, we report the successful formation of porous Si buried underneath GaP islands, and we demonstrate that the buried porous Si layer exhibits strong photoluminescence (λ≈7000 A(ring)).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106495
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  • 6
    Electronic Resource
    Electronic Resource
    Ideal electronic properties of a p-Ge/p-Al0.85Ga0.15As interface (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 318-320 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isotype p+-Ge/p-Al0.85Ga0.15As interface is examined in this study. It is shown that a lattice-matched epitaxial layer of p-Al0.85Ga0.15 on p+-Ge acts like a minority-carrier mirror. Evidence for this action comes from improved short-wavelength response of a p+-n Ge solar cell and from a tenfold reduction in the dark saturation current of a p+-n Ge junction. At the same time, the p+-Ge/p-Al0.85Ga0.15As interface is electrically transparent to majority-carrier hole transport. Similarity of measured specific resistivities of Ti/Au ohmic contacts directly to Ge and through a p-Al0.85Ga0.15As layer to p+ Ge leads to this conclusion in spite of about 1 eV valence-band offset at the Ge-Al0.85Ga0.15As heterojunction interface. A possible mechanism for the hole transport through such an interface is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106378
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  • 7
    Electronic Resource
    Electronic Resource
    Selective plasma etching of Ge substrates for thin freestanding GaAs-AlGaAs heterostructures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2153-2155 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective plasma etching of Ge with a CF4/O2 mixture is used to produce freestanding GaAs-AlGaAs thin films. The etch rate of Ge substrates is as high as 150 μm/h at temperatures of 75 °C under optimized conditions and with a negligible etch rate for GaAs and AlGaAs materials. This plasma etching technique, combined with a lattice-matched growth of GaAs-AlGaAs structures on Ge substrates, has a variety of potential device applications. The characteristics of this etch process and the photoluminescence of freestanding AlGaAs-GaAs structures are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106110
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  • 8
    Electronic Resource
    Electronic Resource
    Measurement of AlGaAs/AlGaAs interface recombination velocities using time-resolved photoluminescence (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1850-1852 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence has been used to examine AlxGa1−xAs/AlyGa1−yAs interfaces, focusing on the recombination velocity. For an Al0.08Ga0.92As/Al0.88Ga0.12As interface, important for solar cells, recombination velocities are about 104 cm/s with the growth conditions used in this study. Several types of interface passivation were attempted, but the most successful was the insertion of thin Al0.14Ga0.86As layers between the other two alloys. Using this technique, a 16-fold increase (to ∼20 ns) of the minority-carrier lifetime was measured in a 0.8-μm-thick Al0.08Ga0.92As layer in which interface recombination would normally have limited the lifetime to about 1–2 ns. Compositional grading was found to be ineffective at passivating the interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103066
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  • 9
    Electronic Resource
    Electronic Resource
    High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substrates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 886-888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device quality GaAs-AlGaAs thin films have been obtained on Si substrates, using a novel approach called eutectic-metal-bonding (EMB). This involves the lattice-matched growth of GaAs-AlGaAs thin films on Ge substrates, followed by bonding onto a Si wafer. The Ge substrates are selectively removed by a CF4/O2 plasma etch, leaving high-quality GaAs-AlGaAs thin films on Si substrates. We have obtained a minority-carrier lifetime of 103 ns in a EMB GaAs-AlGaAs double heterostructure on Si, which is nearly forty times higher than the state-of-the-art lifetime for heteroepitaxial GaAs on Si, and represents the largest reported minority-carrier lifetime for a freestanding GaAs thin film. In addition, a negligible residual elastic strain in the EMB GaAs-AlGaAs films has been determined from Raman spectroscopy measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106494
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  • 10
    Electronic Resource
    Electronic Resource
    Visible light emission from quantized planar Ge structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1603-1605 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible photoluminescence has been observed near 1.9 eV at 300 K from quantized planar Ge structures. This is the first observation of luminescence in Ge and is similar to the recently reported luminescence from porous Si. The quantum structures are prepared from bulk Ge substrates, and both n- and p-type Ge produce luminescence at room temperature. These structures are fabricated by plasma-assisted etching using a CF4/O2 gas mixture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106269
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