ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The results of a study of the distribution of growth dislocations revealed on different faces of L-arginine phosphate monohydrate (LAP) crystals by selective etching in relation to the growth conditions of the crystals are described. It was found that (1) the dislocation density, ϱ, on a face is the highest in its central regions and depends on the supersaturation used for growth, and that (2) ϱ on different faces is different. The observations are discussed from the standpoint of the mechanism of generation of dislocations at the seed-crystal interface in the initial stages of regeneration of the seed and at the crystal-medium interface due to the formation of bunches of growth layers on the growing crystal faces during their development.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00354453
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