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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 6697-6705 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using the tight binding molecular dynamics method (TBMD), the structural and dynamical properties of graphitic tubules are studied. The phonon dispersion and density of states of graphitic tubules with various helicities and diameters are calculated. Phonon modes in tubules are softened by the curvature when compared with graphite. Unique features of the graphitic tubule, with special emphasis on low-frequency modes, are discussed. The symmetry of phonon modes is analyzed, and infrared and Raman active modes are identified. Sound velocities in graphitic tubules are also calculated as functions of tubule helicity and diameter. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 10001-10010 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The effect of pressure on inter- and intramolecular phonons in solid C60 is studied using a unified model which consists of a tight-binding potential for the intramolecular interaction and a Lennard-Jones and bond charge model for the intermolecular interaction. At various pressures (up to 56 kbar), the phonon dispersion and density of states of solid C60 are calculated in the energy range from 0 to 210 meV. At zero pressure, the intermolecular phonon density of states shows peaks around 2.3 and 3.7 meV, and extends to 7.6 meV. Not only the intermolecular phonon modes but also the intramolecular modes show significant dispersions, especially those modes with energy below 70 meV. Under pressure, the intermolecular phonon spectrum shows strong broadening. The libron modes shift to higher frequencies at a rate of 0.40 cm−1/kbar. The effect of pressure on intramolecular modes manifests in two ways: (i) the lower-frequency modes broaden and shift toward higher energies, and (ii) the higher-frequency modes split and shift upward in energy. Intramolecular modes shift to higher energy at a rate up to 0.88 cm−1/kbar. Most Raman and infrared active modes show strong pressure dependence. Inter- and intramolecular phonon spectra at various pressures are presented and results are compared with experiments.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7708-7711 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural correlations in amorphous gallium arsenide are investigated with molecular-dynamics simulations using a new interatomic potential function. The calculated static structure factor, in particular the height and width of the first peak which is a signature of the intermediate-range correlations, is in excellent agreement with x-ray diffraction experiments. Atomistic topology on intermediate length scales is elucidated through the analyses of shortest-path rings, partial static structure factors, and bond-angle distributions. The calculated energy difference between crystalline and amorphous systems is also in good agreement with electronic-structure calculations. © 2000 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3717-3719 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large-scale molecular dynamics simulations are performed to investigate the mechanical stresses in InAs/GaAs nanomesas with {101}-type sidewalls. The in-plane lattice constant of InAs layers parallel to the InAs/GaAs(001) interface starts to exceed the InAs bulk value at the twelfth monolayer (ML) and the hydrostatic stresses in InAs layers become tensile above ∼12 ML. As a result, it is not favorable to have InAs overlayers thicker than 12 ML. This may explain the experimental findings of the growth of flat InAs overlayers with self-limiting thickness of ∼11 ML on GaAs nanomesas. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3328-3330 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multimillion-atom molecular dynamics simulations of silicon diselenide nanowires are used to study mechanical properties and changes in nanowire structure under strain. The nanowires transform from a body-centered orthorhombic structure to a body-centered tetragonal structure under uniaxial strain, which causes an unexpected elongation in one of the transverse directions. For larger strains, the nanowires undergo a process of local amorphization, followed by fracture at one of the resulting crystalline–amorphous interfaces. The critical strain for fracture is 15%. Local temperature and stress distributions after failure are interpreted in terms of the local amorphization. © 2001 American Institute of Physics.
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structure, mechanical properties, and sintering of nanostructured SiC (n-SiC) are investigated with neutron scattering and molecular-dynamics (MD) techniques. Both MD and the experiment indicate the onset of sintering around 1500 K. During sintering, the pores shrink while maintaining their morphology: the fractal dimension is ∼2 and the surface roughness exponent is ∼0.45. Structural analyses reveal that interfacial regions in n-SiC are disordered with nearly the same number of three- and fourfold coordinated Si atoms. The elastic moduli scale with the density as ∼ρμ, where μ=3.4±0.1. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4332-4334 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular dynamics simulations of nanoindentation of 10 million atom α-Si3N4 films using a rigid indenter are reported. Local pressure distributions and configuration images of the plastically deformed region are presented. Residual tensile pressures correspond to voids and cracks that separate regions of compacted, plastically deformed material and elastically recovered crystalline material. Structural analysis shows that pile-up material on the surface and deformed material under the indenter is amorphous. With this indenter geometry, Si3N4 deforms primarily by amorphization, which is arrested by cracking at the indenter corners and piling-up of material along the indenter sides. Indentation fracture exhibits anisotropic behavior consistent with the orientation-dependent fracture toughness values. © 2000 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4577-4579 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral size effects on the stress distribution and morphology of InAs/GaAs square nanomesas are investigated using molecular dynamics (MD) method. Two mesas with the same vertical size but different lateral sizes are simulated. For the smaller mesa, a single stress domain is observed in the InAs overlayer, whereas two stress domains are found in the larger mesa. This indicates the existence of a critical lateral size for stress domain formation in accordance with recent experimental findings. The InAs overlayer in the larger mesa is laterally constrained to the GaAs bulk lattice constant but vertically relaxed to the InAs bulk lattice constant. © 2001 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3152-3154 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dispersion and density of states (DOS) of inter- and intramolecular phonons are calculated for solid C60 using a tight-binding molecular dynamics method. Intermolecular phonon DOS extends up to 7.6 meV and shows libron peaks at 2.3 and 3.7 meV. Orientational disorder softens libron modes. Intramolecular phonons below 70 meV also show significant dispersion. The calculated phonon spectra are in good agreement with inelastic neutron scattering experiments.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3470-3472 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant tunneling of an electron through a double quantum dot is studied in the presence of phonon scattering and magnetic field. The coupled time-dependent Schrödinger equations for an electron and longitudinal-optical phonons are solved numerically within a mean-field approximation. Phonon-induced electron localization is observed. A magnetic field reduces the buildup time of electron probability density in the dots, but increases the decay time associated with the resonant tunneling. Inelastic processes increase the decay time, but their effect on the buildup time depends on the strength of the magnetic field.
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