ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
Improvements of the Fourier transform phase-modulated ellipsometry (FTPME) technique are described. Measurements performed on the silicon oxide-silicon wafer system are used to illustrate FTPME performances. In particular, the chemistry of Si(100) and Si(111) surfaces after hydrofluoric acid (HF) treatment is investigated. Precisions on the ellipsometric angles Ψ and Δ of ±0.003° and ±0.008°, respectively, are obtained in the SiHn stretching mode region. SiH and SiH2 vibrations are identified at the Si surface revealing that submonolayer sensitivity can be achieved with FTPME. As a consequence, FTPME appears as a promising technique to perform detailed studies of interface formation and thin-film growth. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1145492
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