Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
59 (1986), S. 4177-4179
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Antimony diffusion within a heavily phosphorus-doped silicon layer has been studied. Enhanced diffusion of antimony has been found within a heavily phosphorus-doped layer, which contrasts with the retarded diffusion below such layers reported elsewhere. Antimony diffusivity increases in proportion to a certain power of electron concentration when carriers are given by phosphorus, and resembles the behavior of phosphorus diffusivity. These results indicate that the increase of charged vacancies due to Fermi-level effect within heavily phosphorus-doped layers coexists with vacancy undersaturation below the layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336678
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