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  • 1
    Electronic Resource
    Electronic Resource
    Rat kidney renin and cathepsin D: purification and comparison of properties (1983)
    s.l. : American Chemical Society
    Biochemistry 22 (1983), S. 5476-5481 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00293a004
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  • 2
    Electronic Resource
    Electronic Resource
    Negative-ion extraction of gaseous materials from a radio frequency plasma-sputter-type heavy negative-ion source : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1012-1015 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The operational characteristics of a rf plasma-sputter-type heavy negative-ion source with a feeding of O2 or SF6 gas as an ionized material together with Xe gas is presented. To obtain negative ions of chemically reactive elements, we used a material gas and a stainless-steel sputtering target instead of an oxide or fluoride sputtering target to prevent charging trouble. In the source, gas particles adsorbed on the target surface were negatively ionized by sputtering. O− or F− was dominant in the extracted beam and increased with the Cs supply until the yield was optimized. Then, high-current negative ions of mA at an intensity of several, such as 4.6 mA for O− and 4.3 mA for F−, were extracted in a dc mode of operation. Even in this plasma-sputter source with a material gas feeding, the surface production of negative ions was found to be the dominant mechanism. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146800
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  • 3
    Electronic Resource
    Electronic Resource
    Negative-ion implanter for powders and its application to nanometer-sized metal particle formation in the surface of glass beads : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 804-806 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a negative-ion implanter for uniform implantation into each powder surface without particle scattering. It consists of a plasma sputter-type negative-ion source, a mass separator, an acceleration tube, a lens, X–Y deflectors, a 90° deflector, and a Faraday cup with an agitator. The electrostatic 90° deflector bends a horizontal beam to a vertical direction and leads it into the Faraday cup. The agitator is an electromagnetic vibrator at a frequency of 120 Hz, which mixes particles for whole surface treatment and uniform implantation. In this implanter, we obtained no scattering implantation for spherical oxide beads with diameters ranging from 5 to 1000 μm in an agitated state, and also obtained a good uniformity of implanted atoms among beads. For an application of the negative ion implantation into powders, copper ions were implanted into soda-lime glass beads and plates at conditions of 50 and 30 keV, respectively, with 1×1017 ions/cm2. In linear optical properties, both implanted samples show a clear absorption at a photon energy of 2.2 eV due to resonance absorption of copper surface plasmon. In addition, the implanted glass plate shows the large third-order nonlinear susceptibility, χ(3)=1.3×10−7 esu. These results suggest the existence of copper nanometer-sized particles in glass. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150299
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  • 4
    Electronic Resource
    Electronic Resource
    Negative-ion production probability in rf plasma sputter-type heavy negative-ion sourcea) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1732-1736 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have constructed a rf plasma sputter-type heavy negative ion source, which can deliver high current negative ion beams such as Cu− of 12.1 mA, Si− of 3.8 mA, and B−2 of 1 mA in dc operation mode. In our source, the estimated negative ion production probability of Cu was much more than the value obtained by the conventional negative ionization probability equation with an exponential dependence on velocity. We measured heavy negative ion production probabilities by Xe+ sputtering on various cesiated metals. The probabilities were strongly affected by the cesiated surface condition which was determined by a flux of neutral cesium supply to the surface and a target surface temperature. The measured maximum probabilities at the optimal conditions were considerably high, and they were about 10% or more for Cu, C, Si, Ge, and W targets and about 1% for Ta and Mo targets. The probability for very low velocity particles such as sputtered heavy metal atoms might be affected by a surface ionization process with a high local surface temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145233
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  • 5
    Electronic Resource
    Electronic Resource
    Intensification of an impregnated-electrode-type liquid-metal ion source by multiplying the number of tip-and-reservoirs : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2438-2440 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An impregnated-electrode-type liquid-metal ion source has been developed which utilizes a linear array of emitters. This ion source is constructed by placing two emitters that consist of porous ion-emission tips and reservoirs for liquid metal. The emitter is equipped with multiple ion-emission points in a line. Two tip-and-reservoirs (TAR's) are fixed by respective knife-edged electrodes. Utilization of multiple TAR's has an advantage of reducing heater current by connecting them electrically in series. The performance characteristics of the ion source have been investigated using germanium as a source material. Ion emission from 17 points has been achieved with this arrangement; a current of 4.6 mA have been obtained immediately following the ion source. These results indicate that it is possible to extract a current approximately proportional to the number of emission points. The result also implies that a further increase in intensity can be expected by adding more TAR's to the array.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142903
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  • 6
    Electronic Resource
    Electronic Resource
    Intense metal-ion-beam production using an impregnated-electrode-type liquid-metal ion source : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 592-594 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The properties of liquid-metal ion sources are very sensitive to their tip structure. Because the impregnated-electrode-type liquid-metal ion source has a porous tip, it generates more than 300-μA ion currents of various metals including relatively high vapor-pressure metals such as Li, Cu, Ga, Ge, Ag, In, and Au, from which ions can be stably extracted. The large beam divergence, a common disadvantage in liquid-metal ion sources, can be overcome by designing new lens systems to efficiently transport the ion beam for both high- and low-energy applications. In addition, the ion beam current can be multiplied by using multiple emission cusps; thus, a germanium ion current of 1.3 mA was obtained by a three-point emission source. Therefore, the impregnated-electrode-type liquid-metal ion source can be utilized as a metal ion source for general applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141927
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  • 7
    Electronic Resource
    Electronic Resource
    Negative-ion production probability in rf plasma sputter-type heavy negative-ion source (abstract)a) : Proceedings of fifth international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1226-1226 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have constructed a rf plasma sputter-type heavy negative ion source, which can deliver high current negative ion beams such as Cu− of 12.1 mA, Si− of 3.8 mA, and B−2 of 1 mA in dc operation mode. In our source, the estimated negative ion production probability of Cu was much more than the value obtained by the conventional negative ionization probability equation with an exponential dependence on velocity. We measured heavy negative ion production probabilities by Xe+ sputtering on various cesiated metals. The probabilities were strongly affected by the cesiated surface condition which was determined by a flux of neutral cesium supply to the surface and a target surface temperature. The measured maximum probabilities at the optimal conditions were considerably high, and they were about 10% or more for Cu, C, Si, Ge, and W targets and about 1% for Ta and Mo targets. The probability for very low velocity particles such as sputtered heavy metal atoms might be affected by a surface ionization process with a high local surface temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145014
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  • 8
    Electronic Resource
    Electronic Resource
    A negative ion beam application to artificial formation of neuron network in culture : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 797-799 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A negative ion beam modification of the biocompatibility of polystyrene surface was investigated for the artificial formation of neuron network in culture with respect to negative ion species. Negative ions of silver, copper or carbon were implanted in nontreated polystyrene (NTPS) dishes at conditions of 20 keV and 3×1015 ions/cm2 through a mask with many slits of 60 μm in width. For the surface wettability, the contact angle of ion-implanted NTPS was about 75° for silver-negative ions, which was lower than 86° of the original NTPS. For carbon implantation, on the contrary, the contact angles did not change from the original value. In culture experiment using neuron cells of PC-12h (rat adrenal pheochromocytoma), the cells cultured with serum medium in two days showed the cell attachment and growth in number only at the ion-implanted region on NTPS for all ion species. In another two days in culture with nonserum medium including a nerve growth factor, the outgrowth of neural protrusions was also observed only at the ion-implanted region for all ion species. There was a difference in number of attached cells for ion species. The silver-negative ion-implanted NTPS had a large effect for cell attachment compared with other two ion species. This reason is considered to be due to the lowest contract angles among them. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150297
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  • 9
    Electronic Resource
    Electronic Resource
    Extraction of molecular negative-ion beams of CN from radio frequency plasma-sputter-type heavy negative ion source for negative-ion beam deposition : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 884-886 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high current CN negative-ion beam was obtained from a radio frequency plasma-sputter-type heavy negative ion source in a target-gas mode operation and CN negative-ion beam deposition was investigated. CN negative ions of 0.88 mA were safely obtained by using a carbon sputtering target and nitrogen gas instead of cyanogen for ionization. Even in this target-gas mode operation of the source with N2 gas, the work function of the sputtering target surface was effectively decreased by introducing cesium vapor so that the production of CN negative ions was remarkably enhanced. In a CN negative-ion beam deposition on silicon substrate, the nitrogen concentration in deposited layers depended on ion energy and the maximum ratio (N/C) of 0.3 was obtained at an energy of 70 eV. From a Raman spectra with these results, it was found that CN-deposited films were a diamondlike carbon film including nitrogen atoms. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148628
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  • 10
    Electronic Resource
    Electronic Resource
    Measurement of negative-ion-production efficiencies and development of a dc operation sputter-type negative ion source : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2488-2490 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For the development of a high current heavy negative ion source, the production efficiency of the negative ions by Xe+ sputtering with cesium and electron detachment cross sections in xenon gas were measured. The maximum efficiency for Cu− was 12.1% and the single-electron detachment cross section was found to be of the order of 0.6–1.4 × 10−15 cm2 in the energy range of 5–50 keV. Based on the results of these fundamental experiments, a plasma-sputter-type heavy negative ion source has been constructed, in which the plasma was generated at a rf-frequency of 13.56 MHz. A total negative ion current of 2.5 mA was obtained without electrons from the source in dc operation, and the Cu− current was detected to be 91% of the total beam. The operation characteristics are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142921
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