Publication Date:
2016-06-07
Description:
The efficiency and radiation resistance of present silicon solar cells are a function of the oxygen and carbon impurities and the boron doping used to provide the proper resistivity material. The standard Czochralski process used grow single crystal silicon contaminates the silicon stock material due to the use of a quartz crucible and graphite components. The use of a process which replaces these elements with a water cooled copper to crucible has provided a major step in providing gallium doped (100) crystal orientation, low oxygen, low carbon, silicon. A discussion of the Cold Crucible Czochralski process and recent float Zone developments is provided.
Keywords:
ENERGY PRODUCTION AND CONVERSION
Type:
NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1982: High Efficiency, Radiation Damage, and Blanket Technol.; p 157-161
Format:
application/pdf
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