Publication Date:
2017-11-14
Description:
Author(s): P. Barate, S. H. Liang, T. T. Zhang, J. Frougier, B. Xu, P. Schieffer, M. Vidal, H. Jaffrès, B. Lépine, S. Tricot, F. Cadiz, T. Garandel, J. M. George, T. Amand, X. Devaux, M. Hehn, S. Mangin, B. Tao, X. F. Han, Z. G. Wang, X. Marie, Y. Lu, and P. Renucci In view of future spintronic and spin-optronic devices, such as spin light-emitting diodes and spin lasers, it is important to understand the dependence of electrical spin injection on bias in bipolar devices based on GaAs. Focusing on the efficiency of Co-Fe-B/MgO spin injectors, the authors investigate the influence of the MgO growth process on this bias dependence, using MgO tunnel barriers fabricated by different techniques. The bias dependence of spin injection efficiency, and the compromise between high intensity and high circular polarization of electroluminescence, depend strongly on the characteristics of the interface, which can be engineered by the growth process. [Phys. Rev. Applied 8, 054027] Published Mon Nov 13, 2017
Electronic ISSN:
2331-7019
Topics:
Physics
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