ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Molecular-beam epitaxy at 200 °C is used to grow an InAs/GaAs superlattice containing 30 InAs delta-layers with a nominal thickness of 1 monolayer, separated by GaAs layers of thickness 30 nm. It is found that the excess arsenic concentration in such a superlattice is 0.9×1020 cm−3. Annealing the samples at 500 and 600 °C for 15 min leads to precipitation of the excess arsenic mainly into the InAs delta-layers. As a result, a superlattice of two-dimensional sheets of nanoscale arsenic clusters, which coincides with the superlattice of the InAs delta-layers in the GaAs matrix, is obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187561
Permalink