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Internal microstrain and distribution of composition and cathodoluminescence over lapped AlxGa1−x N epilayers on sapphire

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

Structural properties and spatial inhomogeneity of MOCVD-grown AlxGa1−x N layers on (0001) sapphire substrates were studied. A nonuniform distribution of Al across the epilayer was observed in layers grown at constant flux rates of precursors. The model of compositionally graded layer formation is proposed on the basis of cathodoluminescence and X-ray data. It is established that homogeneous samples can be obtained by increasing the flux rate of trimethylaluminum at the initial stage of epilayer growth compared with that in all further stages. Lowering the growth rate reduces strain in epitaxial AlxGa1−x N layers. The influence of strain on the luminescence properties of the layers is discussed.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. S. Usikov, V. V. Tret’yakov, A. V. Bobyl’, R. N. Kyutt, W. V. Lundin, B. V. Pushnyi & N. M. Shmidt

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  1. A. S. Usikov
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  2. V. V. Tret’yakov
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  3. A. V. Bobyl’
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  4. R. N. Kyutt
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  5. W. V. Lundin
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  6. B. V. Pushnyi
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  7. N. M. Shmidt
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 11, 2000, pp. 1300–1306.

Original Russian Text Copyright © 2000 by Usikov, Tret’yakov, Bobyl’, Kyutt, Lundin, Pushny\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Shmidt.

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Usikov, A.S., Tret’yakov, V.V., Bobyl’, A.V. et al. Internal microstrain and distribution of composition and cathodoluminescence over lapped AlxGa1−x N epilayers on sapphire. Semiconductors 34, 1248–1254 (2000). https://doi.org/10.1134/1.1325417

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  • DOI: https://doi.org/10.1134/1.1325417

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