ISSN:
1432-0630
Keywords:
PACS: 61.80; 61.40; 78.65
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. The crystalline-amorphous transition in GaAs induced by Ar ions (energy 1-3 keV) has been investigated using single-wavelength ellipsometry. The experiments have been performed in-situ at room temperature. Ion damage straggling, amorphization threshold and critical energy density have been derived by means of a simple analytical model for the growth of the amorphous layer. This model is discussed and the corresponding calculations are found to be in satisfactory agreement with experimental data.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01571694
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