ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The reaction behavior and growth kinetic of reaction layer were investigated in the Nicontact to n-type 6H-SiC. Annealing was performed at temperature in the range between 800 and1000 ºC for 1 to 240 minutes in Ar atmosphere. The interface reaction of Ni/SiC starts with Nidiffusion into SiC. Ni3Si is initially precipitated and subsequently forms the continuous layer ofd-Ni2Si. Kirkendall voids are formed at the reaction front. Carbon is segregated in the interface layerof nickel silicide. The growth rate of the interface layer follows a parabolic law, meaning that thegrowth rate is controlled by diffusion. The growth occurs in two steps at all examined temperatures: afast growth is followed by a slow growth. In addition, in the late stage, the growth rate changesdramatically below and above 850°C. The observed growth kinetic can be explained by the differenceof Ni diffusivity and the required concentration change for phase transition depending on the phasecomposition and structure. The d-Ni2Si is formed in the early stage, while the e-Ni3Si2 and q-Ni2Si areformed in the late stage below and above 850°C, respectively
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.631.pdf
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