Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 2387-2391
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Effective mobility of electrons in the channel of InP metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated on semi-insulating (SI) or p-type InP substrates was measured in terms of surface electron density and temperature and found to be in fairly good agreement with a model based on the theoretical values calculated by three scattering mechanisms: polar optical-phonon scattering, delta-function-like potential scattering, and screened Coulomb scattering. The effective mobility of electrons in the channel of MISFETs on p-type substrates was lower than that on SI substrates, and this was attributed to a higher density of Coulomb scattering centers in the channel of MISFETs on p-type substrates.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339471
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