ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present an efficient method to compute the maximum transient drain current overshoot in silicon-on-insulator metal-oxide-silicon field effect transistors. The method is based on the physical idea that the number of majority carriers remains unchanged immediately after a change in the applied gate bias. The maximum overshoot is computed by solving the Poisson and the stationary minority carrier transport equations under the constraint that the number of majority carriers is conserved. Hence, the novel aspect of the method is that it allows one to compute the maximum drain current overshoot without resorting to a computationally costly transient simulation. The accuracy of the method is verified by comparing the value of the drain current computed by this method with the maximum value of the drain current computed by transient simulations. The comparisons show that, with this method, the maximum transient drain current overshoot can be computed quite accurately for fast changes in the gate bias.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.353078
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