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  • 1
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    Unknown
    In:  Computers and Geosciences, New York, Conseil de l'Europe, vol. 26, no. 7, pp. 839-845, pp. L10606, (ISSN: 1340-4202)
    Publication Date: 2000
    Keywords: Seismicity ; software ; search
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  • 2
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    Unknown
    In:  J. Phys. Earth, Corvallis, x + 406 pp., Oregon State University Press, vol. 34, no. 1-2, pp. S241-S248, pp. L13610, (ISSN: 1340-4202)
    Publication Date: 1986
    Keywords: CRUST ; JAPAN ; JPE
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  • 3
    Publication Date: 2014-10-18
    Description: Nitrogen (N) is a critical nutrient for plants but is often distributed unevenly in the soil. Plants therefore have evolved a systemic mechanism by which N starvation on one side of the root system leads to a compensatory and increased nitrate uptake on the other side. Here, we study the molecular systems that support perception of N and the long-distance signaling needed to alter root development. Rootlets starved of N secrete small peptides that are translocated to the shoot and received by two leucine-rich repeat receptor kinases (LRR-RKs). Arabidopsis plants deficient in this pathway show growth retardation accompanied with N-deficiency symptoms. Thus, signaling from the root to the shoot helps the plant adapt to fluctuations in local N availability.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Tabata, Ryo -- Sumida, Kumiko -- Yoshii, Tomoaki -- Ohyama, Kentaro -- Shinohara, Hidefumi -- Matsubayashi, Yoshikatsu -- New York, N.Y. -- Science. 2014 Oct 17;346(6207):343-6. doi: 10.1126/science.1257800.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Division of Biological Science, Graduate School of Science, Nagoya University, Chikusa, Nagoya 464-8602, Japan. ; Department of Applied Molecular Biosciences, Graduate School of Bio-Agricultural Sciences, Nagoya University, Chikusa, Nagoya 464-8601, Japan. ; Division of Biological Science, Graduate School of Science, Nagoya University, Chikusa, Nagoya 464-8602, Japan. matsu@bio.nagoya-u.ac.jp.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/25324386" target="_blank"〉PubMed〈/a〉
    Keywords: Amino Acid Sequence ; Arabidopsis/genetics/*growth & development/metabolism ; Arabidopsis Proteins/genetics/*metabolism ; Molecular Sequence Data ; Nitrogen/*metabolism ; Peptides/*metabolism ; Plant Roots/genetics/*growth & development/metabolism ; Plant Shoots/genetics/*growth & development/metabolism ; Receptors, Peptide/genetics/*metabolism ; Signal Transduction
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 4
    Publication Date: 2013-11-23
    Description: Long-duration gamma-ray bursts (GRBs) are an extremely rare outcome of the collapse of massive stars and are typically found in the distant universe. Because of its intrinsic luminosity (L ~ 3 x 10(53) ergs per second) and its relative proximity (z = 0.34), GRB 130427A reached the highest fluence observed in the gamma-ray band. Here, we present a comprehensive multiwavelength view of GRB 130427A with Swift, the 2-meter Liverpool and Faulkes telescopes, and by other ground-based facilities, highlighting the evolution of the burst emission from the prompt to the afterglow phase. The properties of GRB 130427A are similar to those of the most luminous, high-redshift GRBs, suggesting that a common central engine is responsible for producing GRBs in both the contemporary and the early universe and over the full range of GRB isotropic energies.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Maselli, A -- Melandri, A -- Nava, L -- Mundell, C G -- Kawai, N -- Campana, S -- Covino, S -- Cummings, J R -- Cusumano, G -- Evans, P A -- Ghirlanda, G -- Ghisellini, G -- Guidorzi, C -- Kobayashi, S -- Kuin, P -- La Parola, V -- Mangano, V -- Oates, S -- Sakamoto, T -- Serino, M -- Virgili, F -- Zhang, B-B -- Barthelmy, S -- Beardmore, A -- Bernardini, M G -- Bersier, D -- Burrows, D -- Calderone, G -- Capalbi, M -- Chiang, J -- D'Avanzo, P -- D'Elia, V -- De Pasquale, M -- Fugazza, D -- Gehrels, N -- Gomboc, A -- Harrison, R -- Hanayama, H -- Japelj, J -- Kennea, J -- Kopac, D -- Kouveliotou, C -- Kuroda, D -- Levan, A -- Malesani, D -- Marshall, F -- Nousek, J -- O'Brien, P -- Osborne, J P -- Pagani, C -- Page, K L -- Page, M -- Perri, M -- Pritchard, T -- Romano, P -- Saito, Y -- Sbarufatti, B -- Salvaterra, R -- Steele, I -- Tanvir, N -- Vianello, G -- Wiegand, B -- Wiersema, K -- Yatsu, Y -- Yoshii, T -- Tagliaferri, G -- New York, N.Y. -- Science. 2014 Jan 3;343(6166):48-51. doi: 10.1126/science.1242279. Epub 2013 Nov 21.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Istituto Nazionale di Astrofisica (INAF)-Istituto di Astrofisica Spaziale e Fisica Cosmica (IASF) Palermo, Via Ugo La Malfa 153 I-90146 Palermo, Italy.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/24263134" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 204 (1994), S. 1055-1060 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Pharmacology, Biochemistry and Behavior 45 (1993), S. 703-712 
    ISSN: 0091-3057
    Keywords: Barbital ; Calcium channel blockers ; Diltiazem ; Flunarizine ; Physical dependence ; Rat
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Medicine
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1065-1069 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of interfacial oxide on defect generation and regrowth rate in solid-phase epitaxy of amorphized Si has been investigated. Si-ion implantation was used to amorphize the chemical-vapor-deposited polycrystalline Si (poly-Si) and to reduce the oxygen concentration at the poly/single-crystalline Si interface. The crystallinity of the epitaxial layers obtained under different conditions, such as surface treatment, Si-ion-implantation dose, and thermal annealing, was examined by high-resolution electron microscopy and Rutherford backscattering spectroscopy (RBS). Experimental results showed that microtwins were induced by inhomogenious oxygen distribution at the interface and that low defect density (the channeling minimum yield in RBS; χmin=7%) could be achieved for specimens with maximum interfacial oxide thickness of about 4 A(ring).
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 126-130 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new seed structure, partially thickened silicon films on insulator (PTS), is proposed for multilevel seeded-laterally epitaxial silicon films on insulator (SOI). Two-level seeded-laterally epitaxial silicon films on thick SiO2 (2.5 μm) were successfully fabricated, using the PTS structure in conjunction with the electron-beam technique. The SOI surface flatness after recrystallization was also improved by the PTS. Through computer simulation of the electron-beam recrystallization process, it is determined that the PTS structure enhances the lateral heat conduction within the SOI. This is important in smoothly melting the seed and field SOI regions.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A newly developed processing for high aspect ratio hole filling by tungsten chemical vapor deposition, combined with a Si sidewall technique and resist etch back is proposed. A high aspect ratio hole (around 3) was completely filled with W and W-Si alloy without voids. It is also proposed to interpose a TiN/TiSi2 layer between W and Si, in order to suppress rapid silicidation of W at high temperatures above 800 °C. Silicidation rates for W/TiN/TiSi2/Si systems were 2–2.5 orders of magnitude lower than W/Si systems. Electrical contact resistivity was kept to be lower than 1×10−5 Ω cm2 even after 900 °C annealing by suppressing rapid silicidation of W.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2971-2976 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new electron-beam annealing technique, an amplitude modulated pseudoline electron beam, has been proposed for recrystallization of large-area silicon layers on insulating materials (SOI). The technique utilizes an amplitude modulated sinusoidal wave for high-frequency beam oscillation. Through computer simulation of the temperature distribution for the sample surface, precise control of the position probability density profile of the line beam proved to be essential in realizing wide and uniform annealing. An optimum oscillation waveform was determined from the simulation. A large-area SOI, 4 mm (D'Alembertian), was successfully recrystallized.
    Type of Medium: Electronic Resource
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