Publication Date:
2014-06-26
Description:
We demonstrate a drastic improvement in the efficiency of rare-element-free graphene nanomesh (GNM) magnets with saturation magnetization values as large as ∼10 −4 emu/mm 2 , which are 10–100 times greater than those in previous GNM magnets hydrogenated by only annealing under a hydrogen molecule (H 2 ) atmosphere, even at room temperature. This improvement is realized by a significant increase in the area of the mono-H-terminated pore edges by using hydrogen silsesquioxane resist treatment with electron beam irradiation, which can produce mono-H by detaching H-silicon (Si) bonds. This result must open the door for industrial applications of graphene magnets to rare-element-free magnetic and spintronic systems.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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