Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
89 (2001), S. 6459-6463
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure was investigated by secondary-ion mass spectroscopy, Raman spectroscopy, and atomic force microscopy. Ge atoms diffused out through the strained-Si layer during heat treatment of 1000 °C for 1 h. The activation energy of Ge diffusion in strained Si was 3.3 eV, which was lower than the value in unstrained Si (4.7–5.3 eV). Strain in the strained-Si layer did not change after thermal treatment at 950 °C or less for 1 h. Slip lines due to strain relaxation formed at the surface of the strained-Si layer for the samples treated at 950–1000 °C for 1 h. For practical application of the strained-Si/Si0.7Ge0.3 heterostructure to electron devices, the maximum thermal budget should be made less than that equivalent to 900 °C annealing for 1 h. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1371004
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