Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 1734-1736
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photo-induced compressive stress ΔS in hydrogenated amorphous silicon (a-Si:H) has been studied using films deposited by plasma-enhanced or hot-wire chemical vapor deposition on crystalline silicon microcantilevers. The kinetics of ΔS(t) first rises with exposure time as t0.5 and follows a stretched exponential. The saturation values ΔSsat correspond to volume changes of about 10−3, which excludes the possibility that ΔS is a consequence of the light-induced creation of coordination defects. The highest-quality films have large initial stress, small values of the Young's modulus, and a rapid approach of ΔS(t) towards saturation. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1458068
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