Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
78 (1995), S. 3671-3679
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We propose a model for point-defect-assisted transient diffusion and activation of high-dose boron implants in silicon. To model transient diffusion, a nonlinear equilibrium clustering model for point defects is used. The activation of boron is modeled as a Fermi-level-dependent transformation of inactive dopant clusters to substitutional atoms. Comparison with experimental data shows that this approach can provide a description of both rapid thermal annealing and long-time furnace annealing steps, with an excellent predictive capability for both chemical and electrically active profiles. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360748
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