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  • 1
    Electronic Resource
    Electronic Resource
    Composition and Structural Relaxation Effects on the Intrinsic Rayleigh Scattering of Halide Glasses: Annealing Studies (1985)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 5-6 (Jan. 1985), p. 561-570 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/11/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.5-6.561.pdf
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    Paper (German National Licenses)
    Fulltext
  • 2
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    Implementation of a noise reduction circuit for spaceflight IR spectrometers (1992)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: The paper discusses the implementation and analysis of a correlated triple sampling circuit using analog subtractor/integrators. The software and test setup for noise measurements are also described. The correlation circuitry is part of the signal chain for a 256-element InSb line array used in the Visible and Infrared Mapping Spectrometer. Using a focal-plane array (FPA) simulator, system noise measurements of 0.7 DN are obtained. A test setup for FPA/SPE (signal processing electronics) characterization along with noise measurements is demonstrated.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: In: Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992 (A93-53076 23-33); p. 247-256.
    Format: text
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    NASA TECHNICAL REPORTS
  • 3
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    Laser damage tests on InSb photodiodes at 1.064 micron and 0.532 micron (1992)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: InSb photodiodes were examined for performance degradation after pulsed laser illumination at 0.532 micron and 1.064 micron. Incident laser powers ranged from 6 x 10 exp-18 micron-watts to 16 micron-watts in a 50 pm diameter spot. Dark current and spectral response were both measured before and after illumination. Dark current measurements were taken with the diode blanked off and viewing only 77 K surfaces. Long term stability tests demonstrated that the blackbody did not exhibit long term drifts. Other tests showed that room temperature variations did not affect the diode signal chain or the digitization electronics used in data acquisition. Results of the experiment show that the diodes did not exhibit changes in dark current or spectral response performance as a result of the laser illumination. A typical change in diode spectral response (before/after laser exposure) was about 0.2 percent +/- 0.2 percent.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: In: Test and evaluation of IR detectors and arrays II; Proceedings of the Meeting, Orlando, FL, Apr. 22, 23, 1992 (A94-12744 02-35); p. 80-90.
    Format: text
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    NASA TECHNICAL REPORTS
  • 4
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    InGaAs Detectors for Miniature Infrared Instruments (1993)
    In:  Other Sources
    Details
    Publication Date: 2018-06-08
    Description: In the past year, there has been substantial impetus for NASA to consider missions that are of relatively low cost as a trade off for a higher new mission launch rate. To maintain low mission cost, these missions will be of short duration and will use smaller launch vehicles (e.g. Pegasus). Consequently, very low volume, very low mass instrument (a.k.a. miniature instrument) payloads will be required. Furthermore, it is anticipated that the number of instruments flown on a particular mission will also be highly constrained; consequently increased instrument capability will also be desired. In the case of infrared instruments, focal planes typically require cooling to ensure high performance of the detectors, especially in the case of spectrometers where high D* is necessary. In this paper, we discuss the InGaAs detector technology and its potential.
    Type: International Society for Optical Engineering (SPIE): Infrared Systems Engineering; Los Angeles, CA; United States
    Format: text
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    NASA TECHNICAL REPORTS
  • 5
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    Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications (1994)
    In:  Other Sources
    Details
    Publication Date: 2018-06-08
    Description: JPL, under sponsorship from the NASA Office of Advanced Concepts and Technology, has been developing a second-generation solid-state image sensor technology. Charge-coupled devices (CCD) are a well-established first generation image sensor technology. For both commercial and NASA applications, CCDs have numerous shortcomings. In response, the active pixel sensor (APS) technology has been under research. The major advantages of APS technology are the ability to integrate on-chip timing, control, signal-processing and analog-to-digital converter functions, reduced sensitivity to radiation effects, low power operation, and random access readout.
    Keywords: Electronics and Electrical Engineering
    Format: text
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    NASA TECHNICAL REPORTS
  • 6
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    A 128 x 128 InGaAs detector array for 1.0 - 1.7 microns (1990)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: A two-dimensional 128 x 128 detector array for the 1.0 - 1.7 micron spectral region has been demonstrated with indium gallium arsenide. The 30 micron square pixels had 60 micron spacing in both directions and were designed to be compatible with a 2D Reticon multiplexer. Dark currents below 100 pA, capacitance near 0.1 pF, and quantum efficiencies above 80 percent were measured. Probe maps of dark current and quantum efficiency are presented along with pixel dropout data and wafer yield which was as high as 99.89 percent (7 dropouts) in an area of 6528 pixels and 99.37 percent (103 dropouts) over an entire 128 x 128 pixel region.
    Keywords: INSTRUMENTATION AND PHOTOGRAPHY
    Type: Infrared Technology XVI; Jul 11, 1990 - Jul 13, 1990; San Diego, CA; United States
    Format: text
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    NASA TECHNICAL REPORTS
  • 7
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    Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micron (1990)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: Separate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Infrared Detectors and Focal Plane Arrays; Apr 18, 1990 - Apr 19, 1990; Orlando, FL; United States
    Format: text
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    NASA TECHNICAL REPORTS
  • 8
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    Responsivity of silicon photodiodes from 0.5 to 1.1 micron at 77 K (1988)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR Mapping Spectrometer (VIMS). Quantitative responsivity data for Si photodiodes in the band from 0.5 to 1.1 were needed for the VIMS system analysis. The results show that the Si array for the focal plane should have two different antireflection coatings. It is found that the Si and InSb materials have equivalent quantum efficiencies at about 0.9 microns. Because of unknown signal chain complications that could be caused by a multiplexer accessing two different capacitances, the focal plane was designed with a change from Si to InSb at 1 micron.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Infrared Technology XIV; Aug 15, 1988 - Aug 17, 1988; San Diego, CA; United States
    Format: text
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    NASA TECHNICAL REPORTS
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