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  • 1
    Electronic Resource
    Electronic Resource
    Interface phenomena and optical properties of structurally confined InP quantum wire ensembles (1997)
    Springer
    Physics of the solid state 39 (1997), S. 641-648 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Three-dimensional regular ensembles of InP quantum wires have been produced in channels of porous dielectric matrices by metal-organic chemical vapor deposition. These matrices differ both in the diameter of the channels (0.7, 3, and 8 nm) and in their spatial arrangement. The InP layer thickness does not exceed two-three monolayers. A comparative study of Raman, optical absorption, and photoluminescence spectra revealed the dependence of the optical properties of these quantum wires on interface effects, namely, atomic interaction in the wires, wire-matrix, and wire-wire interactions. It is shown that the wire-matrix interaction distorts the InP lattice, broadens the wire electronic density-of-states spectrum in the vicinity of the fundamental gap, and redistributes the relaxation of photoinduced excitations among states belonging to the wire itself and to defects in the matrix bound to the wire.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1129945
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  • 2
    Electronic Resource
    Electronic Resource
    Low-temperature emission of Al0.48In0.52As under high pressures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3571-3578 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the low-temperature emission of Al0.48In0.52As under high pressures from 1 bar up to 92 kbar, paying special attention to the changes in luminescence mechanisms that occur concurrently with the crossover between the Γ- and the X-related states. By investigating the temperature and excitation power dependence of the photoluminescence together with the photoluminescence excitation, we demonstrate the low-temperature emission of Al0.48In0.52As is due to neutral donor-acceptor-pair (D0,A0) transitions with a relatively deep acceptor. This occurs in both the Γ- and the X-related states. We suggest the shallow donor ground states associated with the X and the Γ conduction bands seem to be tied quite rigidly to these conduction bands. Variations in the donor binding energies with the pressure and the Γ-X related state crossover seem to be minor. The linear pressure coefficients αΓ and αX of the (D0,A0) related to the Γ and the X levels in the conduction band are 7.9±0.1 and −2.9±0.1 meV/kbar, respectively. The Γ-X related state crossover occurs at ∼52.5±0.5 kbar at 2 K. The direct band gap EΓg and the indirect band gap Exg of Al0.48In0.52As are ∼1.61 and ∼2.17 eV at 1 bar and 2 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356068
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  • 3
    Electronic Resource
    Electronic Resource
    Multiple-phonon relaxation in GaAs-AlGaAs quantum well dots (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5047-5052 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report resonant Raman scattering (RRS) and "hot'' exciton luminescence (HEL) from dry etched GaAs-AlGaAs quantum dots in which quantum confinement effects have been found with decreasing dot sizes. Up to fourth-order multiphonon processes have also been observed for the first time via photoluminescence and photoluminescence excitation in quantum dots. These results are direct evidence of the bottleneck effect. Hot carriers are maintained due to the slowed-down electron-phonon scattering in one- and zero-dimensional semiconductors. The competition between resonant relaxation via LO phonons and sidewall nonradiative recombination results in stronger multiphonon processes with increasing quantum confinement. Furthermore, lateral patterning of quantum wells strongly localizes excitons in three-dimensional quantum confinement regime. The observation of RRS and HEL up to high temperature demonstrates the high stability of localized excitons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354287
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  • 4
    Electronic Resource
    Electronic Resource
    Process-induced strains in dry etched semiconductor nanostructures studied by photoreflectance (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6481-6484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reports a photoreflectance study of the process-induced strains in both dry etched CdTe/Cd0.875Mn0.125Te and GaAs/Al0.3Ga0.7As nanostructures patterned by electron beam lithography. The results show that compressive strains can be introduced in both the dry etched nanostructures and the layers underneath the etched surfaces due to the introduction of defect complexes and/or crystographic damage inflicted in the fabrication process. The effect of post dry etch thermal annealing on the strains in the dry etched nanostructures has also been studied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359123
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  • 5
    Electronic Resource
    Electronic Resource
    Photoreflectance and photoluminescence of partially intermixed GaAs/AlGaAs double quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5434-5438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance and photoluminescence were used to study GaAs/AlGaAs quantum wells (QWs) as they were partially intermixed using SiO2 capped rapid thermal annealing. As the annealing temperature was increased, the experimental photoreflectance results showed spectral features moving to higher energies and merging to form broad peaks. This is explained by changes in the shapes of the originally square wells, which result in a convergence of their subbands around certain energies. The interpretation of these changes showed that the partially intermixed QWs were well described by an error-function profile.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357199
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  • 6
    Electronic Resource
    Electronic Resource
    Optical properties of self-assembled arrays of InP quantum wires confined in nanotubes of chrysotile asbestos (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 380-385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three-dimensional arrays of structurally confined InP wire-like nanostructures were grown in channels (nanotubes) of a chrysotile asbestos matrix by metalorganic chemical vapor deposition. The formation of the InP compound was confirmed by absorption spectroscopy, X-ray diffraction and Raman scattering. It is shown that the density of states around the band edge increases with the InP loading of the matrix. Photoluminescence spectra of the asbestos filled in with InP consist mainly of two bands: a high energy band which is interpreted to be associated with charge transfer from InP to defect states of the asbestos and a low energy band which is associated with energy relaxation in the InP deposit itself. We show that the optical properties of this material are dominated by the size and dimensionality of the pore system of the matrix for heavy loading and by the semiconductor-to-matrix interface for light loading of the matrix with InP. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365823
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  • 7
    Electronic Resource
    Electronic Resource
    Raman scattering of coupled longitudinal optical phonon-plasmon modes in dry etched n+-GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3754-3759 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out extensive Raman scattering investigations of the damage caused by the dry etching in GaAs. The heavily doped n+-GaAs (2–3×1018 cm−3) allows the study of the coupled longitudinal optical (LO) phonon-plasmon mode as a probe to assess the dry etch-induced damage. Three etching techniques were used including conventional radio frequency (rf) reactive ion etching (RIE), ion beam etching (IBE), and electron cyclotron resonance radio frequency reactive ion etching (ECR-RIE). It is demonstrated that the etched damage is confined to a few tens of nanometers after 20 nm of material is etched away. ECR-RIE etching produces the smallest damage. It is found that in RIE etching, as etching proceeds, the depletion depth saturates while for purely physical etching (IBE) the depletion depth increases continuously, at least under the conditions used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350885
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  • 8
    Electronic Resource
    Electronic Resource
    Emission in a SnS2 inverted opaline photonic crystal (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 731-733 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of a dye embedded in the three-dimensional SnS2 inverted opal has been studied. Changes of the emission spectrum compared with the free-space dye emission was observed in the stop-band frequency range in accord with reflectance/transmission spectra of this photonic crystal. The angular-dependent component, due to the Bragg stop band, and the angular-independent component, which is, possibly, related to the minimum in the density of photon states, have been distinguished in the dye emission spectrum. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389825
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  • 9
    Electronic Resource
    Electronic Resource
    Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1526-1528 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the optical properties of InAs/GaAs heterostructures with InAs average layer thickness ranging from 1 A(ring) [one-third of a monolayer (ML)] to 4 ML grown on (100) and (311) surfaces. Extremely high optical quality was revealed for the structures with ultrasmall InAs coverage. We attribute the improvements to the first stage of InAs growth on the GaAs surface which we refer to as submonolayer epitaxy. Optical anisotropy found in photoluminescence (PL), as well as in PL excitation spectra indicates a highly anisotropic growth mode for InAs molecules on the GaAs (100) surface. An InAs/GaAs superlattice composed of submonolayer InAs exhibits greatly improved luminescence efficiency at room temperature and much better nonequilibrium carrier capture compared to either the (In,Ga)As alloy or an InAs/GaAs superlattice composed of monolayer-thick InAs layers with the same average In composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111880
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  • 10
    Electronic Resource
    Electronic Resource
    Size dependence of the thermal broadening of the exciton linewidth in GaAs/Ga0.7Al0.3As single quantum wells (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1411-1413 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the temperature dependence of the linewidth, Γ(T), of the fundamental absorption edge in bulk GaAs and four GaAs/Ga0.7Al0.3As single quantum wells of different well width using photoreflectance. As a result of the size dependence of the exciton-longitudinal optical phonon interaction, the thermal broadening of the linewidth diminishes as the dimensionality and size of the system are reduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107554
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