ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Using the Vapor-Liquid-Solid mechanism in Ge-Si melts we have grown 3C-SiClayers on top of 〈0001〉-oriented, Si face, 6H-SiC substrates. The surface morphology wasfree of spiral growth but highly step bunched. The 3C-SiC polytype was identified by micro-Raman spectroscopy and confirmed by low temperature photoluminescence. Electronbackscattering diffraction mapping showed that the upper side of the layers is single-domain,i.e. that the 3C-SiC material displays only one in-plane orientation. Cross-sectional and planeviewTEM investigations allowed detection of double positioning boundaries but onlyconfined at the substrate/epilayer interface. The main additional defects found were stackingfaults (SF) with a density of ~ 4.103 cm-1. Forming at the interface, they propagate through theepitaxial layer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.287.pdf
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