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  • 1
    Electronic Resource
    Electronic Resource
    Cavity-polariton dispersion and polarization splitting in single and coupled semiconductor microcavities (1999)
    Springer
    Physics of the solid state 41 (1999), S. 1223-1238 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Recent theoretical and experimental work on linear exciton-light coupling in single and coupled semiconductor microcavities is reviewed: emphasis is given to angular dispersion and polarization effects in the strong-coupling regime, where cavity-polariton states are formed. The theoretical formulation is based on semiclassical theory. The energy of single-cavity modes is determined by the Fabry-Pérot frequency ω c as well as by the center of the stop band ω s of the dielectric mirrors; the phase delay in the dielectric mirrors carries a nontrivial angle-and polarization dependence. The polarization splitting of cavity modes depends on the mismatch between ω c and ω s, and increases with internal angle as sin2 θ eff. Interaction between the cavity mode and quantum-well (QW) excitons is described at each angle by a two-oscillator model, whose parameters are expressed in terms of microscopic quantities. Weak and strong coupling regimes and the formation of cavity polaritons are described. Comparison with experimental results on a GaAs-based cavity with In0.13Ga0.87As QWs shows that a quantitative understanding of polariton dispersion and polarization splitting has been achieved. Coupling of two identical cavities through a central dielectric mirror induces an optical splitting between symmetric and antisymmetric modes. When QW excitons are embedded in both cavities at antinode positions, the system behaves as four coupled oscillators, leading to a splitting of otherwise degenerate exciton states and to separate anticrossing of symmetric and antisymmetric modes. These features are confirmed by experimental results on coupled GaAs cavities with In0.06Ga0.94As QWs. An analysis of reflectivity lineshapes requires the inclusion of the effect of resonance narrowing of cavity polaritons. Finally, the polarization splitting in a coupled cavity depends both on the single-cavity factors and on the angle-and polarization dependence of the optical coupling between the cavities. Inclusion of all these effects provides a good description of the experimental findings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130973
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  • 2
    Electronic Resource
    Electronic Resource
    Stark ladders in piezoelectric superlattices (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1775-1779 
    Details
    ISSN: 0392-6737
    Keywords: Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Dielectric, piezoelectric, and ferroelectric materials ; Electrooptical effects ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We describe an experimental and theoretical investigation of Wannier-Stark ladders in the optical spectra of (111)B InGaAs/GaAs piezoelectric superlattices. A unique feature of these structures is that an external electric field can be used to produce a flat superlattice—that is zero overall potential drop per period—in which there are large, opposing fields in the well and barrier. These fields cause a spatial separation of the electron and hole wave functions in the axial direction, leading to Stark ladderss which are intermediate between Type I (electrons and holes together) and Type II (electrons and holes separated by half a period) in character.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457279
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  • 3
    Electronic Resource
    Electronic Resource
    Vacuum rabi splitting in semiconductor microcavities with applied electric and magnetic fields (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1781-1786 
    Details
    ISSN: 0392-6737
    Keywords: Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Electroopical effects ; Magnetooptical effects ; Photon interactions with atoms ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We describe the use of measurements of vacuum Rabi splitting to extract values for the exciton oscillator strengths in In0.13Ga0.87As-GaAs and GaAs-Al0.2Ga0.8As quantum wells. By varying both field and temperature we determine the changes in the oscillator strength in applied electric and magnetic fields. We show that these are in good agreement with the results of quantum well exciton calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457280
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6374-6378 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a structural and optical spectroscopic investigation of multiple layer InAs/GaAs self-assembled quantum dots, studied as a function of the GaAs thickness between the quantum dot layers. With decreasing GaAs thickness the positions of dots in different layers exhibit a transition from no correlation to full correlation. Optically the dots in uncorrelated and fully correlated structures are found to exhibit very distinct and different properties. With increasing laser power the photoluminescence of the correlated structure exhibits a high energy, asymmetrical broadening, an effect absent in the uncorrelated structure. In photoluminescence excitation multiple-LO-phonon carrier relaxation features are observed in the spectra of the uncorrelated structure but not in the spectra of the correlated structure. These differences are explained in terms of nonresonant carrier tunneling between the dots in the correlated dot structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418003
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  • 5
    Electronic Resource
    Electronic Resource
    Strong exciton–photon coupling in an organic semiconductor microcavity (1998)
    [s.l.] : Macmillan Magazines Ltd.
    Nature 395 (1998), S. 53-55 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The modification and control of exciton–photon interactions in semiconductors is of both fundamental and practical interest, being of direct relevance to the design of improved light-emitting diodes, photodetectors and lasers. In a semiconductor microcavity, the confined electromagnetic ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/25692
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  • 6
    Electronic Resource
    Electronic Resource
    Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 213-215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compositional dependence of the electronic band structure of (AlxGa1−x)0.52In0.48P lattice matched to GaAs is reported. Epitaxial layers, grown by solid-source molecular-beam epitaxy, with excellent structural and optical quality are obtained over the whole compositional range. Optical spectroscopic techniques are used to study the electronic band structure as a function of composition. The low-temperature, direct excitonic band gap is found to be given by Eg(x)=1.979+0.704x eV and the lowest band gap becomes indirect for xc=0.50±0.02. The low-temperature excitonic direct band gap of Al0.52In0.48P is measured to be 2.680 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112676
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  • 7
    Electronic Resource
    Electronic Resource
    Carrier screening effects in piezoelectric strained InGaAs/GaAs quantum wells grown on the [111]B axis (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5447-5452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitation-power-dependent blue shifts in photoluminescence and electroluminescence are studied in piezoelectric strained layer multiple quantum wells (MQWs) incorporated in p-i-n diodes. By investigating MQWs with different geometric structures and controlling external bias it is demonstrated that, in contrast to previous studies, these blue shifts cannot always be attributed to long-range screening across a MQW and that screening must take place due to charge redistribution within individual wells. The results provide design rules to ensure this latter screening mechanism, which is subject to fast recovery.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357202
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  • 8
    Electronic Resource
    Electronic Resource
    Solid-source molecular beam epitaxy growth of GaInP and GaInP-containing quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2029-2034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and characterization of high quality epitaxial layers of GaInP and GaInP-containing quantum wells grown by solid-source molecular beam epitaxy (MBE) is reported. Bulk GaInP shows photoluminescence linewidths as small as 6.7 meV and double-crystal x-ray diffraction linewidths as narrow as 12.5 arcsec. Evidence for the presence of long-range ordering in MBE-grown GaInP is discussed. GaAs-GaInP quantum wells show good structural and optical quality. A comparison of the measured transition energies with the predictions of a simple, finite depth square well model suggests a very small value for the conduction band offset in this system. GaInP-(Al0.37Ga0.64)0.51In0.49P quantum wells show good optical properties with emission at energies as high as 2.15 eV (≡6000 A(ring) at 300 K) at 4.2 K for a 12 A(ring) well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356304
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  • 9
    Electronic Resource
    Electronic Resource
    Electric-field-dependent photoconductivity in GaInAs-InP quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 752-754 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the effects of an electric field on the excitonic, band-to-band photoconductivity spectra of a Ga0.47In0.53As-InP quantum well structure. In a sample with five wells of widths 10–110 A(ring) we show that for carrier motion normal to the quantum well layers a photoconductivity signal is only observed from those wells which are in a region of nonzero electric field. The spectral line shapes of the transitions in the narrowest two wells show strong variations with field, which we attribute to exciton dissociation at high field, and possibly exciton screening by free carriers trapped in the wells at low fields. The results are compared with photoconductivity spectra of the same structure, but for carrier motion in the plane of the layers. The latter geometry is found to reflect more accurately the sample absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99822
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  • 10
    Electronic Resource
    Electronic Resource
    Cross-barrier recombination in a GaAs/AlGaAs double-barrier resonant tunneling structure (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8844-8846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation by photoluminescence (PL) spectroscopy of cross-barrier recombination between spatially separated two-dimensional electron and hole gases confined respectively in the quantum well (QW) and collector accumulation layer of a GaAs/AlGaAs double-barrier resonant tunneling structure. At the onset of the n=3(E3) resonance in the current–voltage characteristic, the energy of the cross-barrier transition Ecr is found to coincide with that of the PL peak arising from recombination of electrons from the E3 confined level in the QW with n=1 confined hole states (E3lh recombination). Similarly, at the onset of the E4 resonance, Ecr≈E4lh. We show that this behavior arises as a consequence of the symmetrical potential distribution within the structure at the onsets of the resonances. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362511
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