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  • 1
    Electronic Resource
    Electronic Resource
    Dual wavelength fluorescence from acenaphthylene and derivatives in fluid media (1979)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 101 (1979), S. 6779-6781 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00516a063
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  • 2
    Electronic Resource
    Electronic Resource
    Exciton effects in strain-balanced GaInAs/AlInAs and GaInAs/GaInAs coupled quantum wells (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1607-1612 
    Details
    ISSN: 0392-6737
    Keywords: Optical properties of thin films, surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds) ; Nonlocalized single-particle electronic states ; Collective effects ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary High magnetic and electric fields are used to investigate the excitonic properties of strain-balanced InGaAs coupled quantum wells, providing details of their band structure. The bands are strongly non-parabolic and the heavy in-plane hole mass deduced for a lattice-matched structure is shown to be reduced by either tensile or compressive strain. The different band-offsets on changing from InGaAs to AlInAs barriers modify the interwell coupling and result in the observation of Stark ladder transitions and conventional Stark effect behaviour, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457251
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  • 3
    Electronic Resource
    Electronic Resource
    Optical spectroscopy of AlGaInP based wide band gap quantum wells
    Amsterdam : Elsevier
    Superlattices and Microstructures 15 (1994), S. 313 
    Details
    ISSN: 0749-6036
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/spmi.1994.1060
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  • 4
    Electronic Resource
    Electronic Resource
    Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4689-4696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied a series of (111) oriented GaAs–InGaAs single quantum well, broad area lasers with active regions containing a range of indium concentrations, x, in order to understand the advantages and limitations of pseudomorphic strain. For x≤0.3, both an increased emission wavelength and reduced threshold current were observed with increasing x. The predominant cause of the wavelength increase is the reduction in bulk InGaAs band gap. The reduction in threshold current is attributed mainly to the reduced in-plane density of states caused by the strain induced lifting of the heavy and light hole degeneracy at the valence band edge. For x〉0.3, we see a marked deterioration in laser performance. However, we believe that this deterioration is not directly associated with strain relaxation at layer thicknesses beyond the critical value. Rather, imperfections in the AlGaAs cladding layers appear to seed the formation of dislocations within the strained regions. Within the limitation of strain relaxation, we observed monomode continuous wave emission at room temperature at wavelengths up to 1.072 μm and with threshold current densities as low as 74 A/cm2. The differential gain of 1.45×10−15 cm2 is around four times higher than measured on unstrained GaAs/AlGaAs single quantum well lasers. Like the reduction in threshold current density, this relatively high value is attributed to the strain induced reduction in the in-plane, heavy hole effective mass. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359155
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 213-215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compositional dependence of the electronic band structure of (AlxGa1−x)0.52In0.48P lattice matched to GaAs is reported. Epitaxial layers, grown by solid-source molecular-beam epitaxy, with excellent structural and optical quality are obtained over the whole compositional range. Optical spectroscopic techniques are used to study the electronic band structure as a function of composition. The low-temperature, direct excitonic band gap is found to be given by Eg(x)=1.979+0.704x eV and the lowest band gap becomes indirect for xc=0.50±0.02. The low-temperature excitonic direct band gap of Al0.52In0.48P is measured to be 2.680 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112676
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  • 6
    Electronic Resource
    Electronic Resource
    Solid-source molecular beam epitaxy growth of GaInP and GaInP-containing quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2029-2034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and characterization of high quality epitaxial layers of GaInP and GaInP-containing quantum wells grown by solid-source molecular beam epitaxy (MBE) is reported. Bulk GaInP shows photoluminescence linewidths as small as 6.7 meV and double-crystal x-ray diffraction linewidths as narrow as 12.5 arcsec. Evidence for the presence of long-range ordering in MBE-grown GaInP is discussed. GaAs-GaInP quantum wells show good structural and optical quality. A comparison of the measured transition energies with the predictions of a simple, finite depth square well model suggests a very small value for the conduction band offset in this system. GaInP-(Al0.37Ga0.64)0.51In0.49P quantum wells show good optical properties with emission at energies as high as 2.15 eV (≡6000 A(ring) at 300 K) at 4.2 K for a 12 A(ring) well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356304
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  • 7
    Electronic Resource
    Electronic Resource
    Low-temperature mobility of two-dimensional electrons in (Ga,In)As–(Al,In)As heterojunctions (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8465-8469 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an investigation of the scattering mechanisms affecting the two-dimensional electron system in modulation-doped Ga0.47In0.53As–Al0.48In0.52As single heterojunctions. Low-temperature magnetotransport measurements were used to determine the dependence of the electron mobility μ on the density Ns of the two-dimensional carriers. For Ns≤4×1011 cm−2, we find that μ increases with Ns, leveling off as Ns is further increased. This behavior is a clear indication that, contrary to some theoretical predictions, μ is chiefly limited by ionized-impurity scattering in this regime. We develop a theoretical model of the scattering mechanisms present in our systems whose results agree with our experiments. We find that alloy and interface-roughness scattering become important only when Ns≥5×1011 cm−2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362481
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of InAsxP1−x/InP multi-quantum well structures by solid source molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3330-3334 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth of high quality pseudomorphic InAsxP1−x/InP single and multi-quantum well (MQW) structures by solid source molecular beam epitaxy, using valved cracker sources to accurately control the group V ratio. A series of MQW's grown in a p-i-n configuration covering the 1.0–1.30 μm wavelength showed intense narrow room temperature photoluminescence (PL) and extremely narrow 10 K PL linewidths (≤8 meV). Devices fabricated from these structures exhibited low reverse dark currents (〈10 nA at 25 V) which increased as the strain within the structure increased. These results confirm the suitability of InAsxP1−x/InP for optoelectronic devices in this wavelength range. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360026
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5163-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering in the CuPt structure is known to significantly reduce the band gap of Ga0.52In0.48P as well as induce a number of unusual details in its optical properties, including long, excitation-intensity-dependent lifetimes and an excitation-intensity-dependent emission energy. We report photoluminescence (PL), photoluminescence excitation (PLE), and resonant Raman measurements performed on ordered and disordered Ga0.52In0.48P. The dominant high energy emission process at low temperature in disordered Ga0.52In0.48P is established to be excitonic, but the exciton trapping energy is not unique. PLE from ordered Ga0.52In0.48P shows significant tailing of electronic states into the band gap and a "band edge'' which depends on detection energy. The dominant radiative process in ordered Ga0.52In0.48P is not excitonic. A large increase in the Stokes shift between the absorption edge (band gap) and PL emission peak occurs when the material orders. Hence, low temperature PL is determined to be a particularly poor measure of band gap. Resonant Raman scattering is used to study optical phonons and their coupling to electronic states. We find that the resonance enhancement at the band edge occurs via localized excitons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353792
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  • 10
    Electronic Resource
    Electronic Resource
    Impact ionization coefficients of Al0.8Ga0.2As (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4374-4376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impact ionization coefficients in bulk Al0.8Ga0.2As have been determined from photomultiplication measurements over the electric field range of 328–519 kV/cm. Unlike in AlxGa1−xAs (x≤0.6), where the electron to hole ionization coefficients ratios (1/k) are less than 2, the 1/k value in Al0.8Ga0.2As was found to be greater than 10. Excess noise measurements corroborated the multiplication results, suggesting that this material may be a suitable multiplication medium for low noise avalanche photodiodes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336556
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