ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract An excess tunnel current in GaP epitaxial nondegenerate p-n junctions on GaP and Si substrates was studied. An important experimental result is that the slope of exponential current-voltage (I–V) characteristic (in lnI–V coordinates) is independent of the width of the space-charge region, i.e., on n-and p-region doping levels. This fact is unexplained by existing models. A dislocation shunt model based on multihop tunneling through a dislocation line, which may be considered as a chain of parabolic potential barriers, is proposed. The density of dislocations predicted by this model is in agreement with the transmission electron microscopy (TEM) observations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1325428
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