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  • 1
    Electronic Resource
    Electronic Resource
    Shear-mode piezoelectric properties of Pb(Yb1/2Nb1/2)O3–PbTiO3 single crystals (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 892-894 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, the shear-mode piezoelectric and electromechanical properties of 0.55Pb(Yb1/2Nb1/2)O3–0.45PbTiO3 (PYNT45) single crystals are reported. The piezoelectric coefficients d15 and g15 were found to be 2100 pC/N and 0.064 Vm/N, respectively, with an electromechanical coupling coefficient k15 of 91% at room temperature. With increasing temperature, the values decreased dramatically above 168 °C, corresponding to the ferroelectric–ferroelectric phase transition temperature. In contrast to 0.955Pb(Zn1/3Nb2/3)O3–0.045PbTiO3 single crystals, PYNT45 crystals exhibit a larger g15 and the useful temperature range is significantly expanded. High-temperature aging experiments showed that PYNT45 single crystals exhibit good domain stability. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1497435
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  • 2
    Electronic Resource
    Electronic Resource
    Dielectric Properties and Relaxation in (1−x)BiScO3–xBa(Mg1/3Nb2/3)O3 Solid Solutions (2004)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 87 (2004), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The dielectric properties and frequency dispersion associated with a dielectric relaxation were evaluated within the perovskite (1−x)BiScO3–xBa(Mg1/3Nb2/3)O3 solid solution systems (0.7 ≤x≤ 1). With increasing BiScO3, the room-temperature dielectric permittivity at low frequency (100 Hz) increased up to 115 at x= 0.7, and a dielectric relaxation phenomenon was evident. Relaxation parameters were analyzed using several Arrhenius-type equations, and the microwave dielectric property measurement using rectangular wave-guide method enabled confirmation of the extrapolated value of the Arrhenius plot. The result of the microwave dielectric property measurement was also checked with J-function fitting based on the frequency-dependent Gaussian distribution of the associated dielectric loss data at low frequency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2004.01088.x
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  • 3
    Electronic Resource
    Electronic Resource
    Electric field dependence of piezoelectric properties for rhombohedral 0.955Pb(Zn1/3Nb2/3)O3– 0.045PbTiO3 single crystals (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2810-2814 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric field dependence of the piezoelectric properties of rhombohedral 0.955Pb(Zn1/3Nb2/3)O3–0.045PbTiO3 crystals were investigated as a function of orientation with respect to the prototypic (cubic) axes. For 〈111〉 oriented fields, depolarization and subsequent domain reorientation resulted in an apparent maximum in the piezoelectric coefficients occurring at ∼5 kV/cm, followed by nonhysteretic dij saturation, indicating a single domain state under bias. By extrapolation, single domain values for the piezoelectric coefficients d33 and d31 were determined to be 125 and −35 pC/N, respectively. The hydrostatic piezoelectric coefficient dh for single domain crystals was calculated to be ∼55 pC/N, coincident with the experimentally determined values under hydrostatic pressure. For 〈001〉 oriented fields, piezoelectric coefficients d33〈001〉 and d31〈001〉 as high as 2250 and −1000 pC/N were determined, respectively. Although a high value of dh〈001〉 (∼250 pC/N) was expected, the experimentally determined value was only ∼50 pC/N. A change of polar vector within the crystal lattice was discussed in relation to the volume strain associated with an E-field induced phase transition and the possible origin of the discrepancy in hydrostatic dh values. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369599
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  • 4
    Electronic Resource
    Electronic Resource
    Bismuth zinc niobate pyrochlore dielectric thin films for capacitive applications (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 767-774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi2O3–ZnO–Nb2O5 pyrochlore thin films were prepared on platinum coated Si wafers using a metalorganic deposition process. The structures, morphologies, and dielectric properties of films with two compositions: (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 and Bi2(Zn1/3Nb2/3)2O7, were investigated. Thin films of (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 have a cubic pyrochlore phase when crystallized at 550 °C or higher. The crystal structure of Bi2(Zn1/3Nb2/3)2O7 thin films was dependent on the firing temperature; the films showed the cubic pyrochlore phase at temperatures below 650 °C, and a pseudo-orthorhombic pyrochlore structure at 750 °C. A mixture of cubic and pseudo-orthorhombic structures was found in thin films crystallized at 700 °C. (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 films fired at 750 °C had a dielectric constant of ∼150 and a negative temperature coefficient of capacitance of −400 ppm/°C. Bi2(Zn1/3Nb2/3)2O7 thin films fired at 750 °C had a smaller dielectric constant of ∼80 and a positive temperature coefficient of capacitance of 150 ppm/°C. The dielectric constants of the thin films are composition, structure, and firing temperature dependent. The loss tangents of both types of films were smaller than 0.008. Bias voltage dependence of dielectric constant showed that the cubic (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 films fired at 750 °C were tunable, while the pseudoorthorhombic Bi2(Zn1/3Nb2/3)2O7 films were nearly field independent. The relatively large dielectric constants, small loss tangents, controllable temperature coefficients of capacitance, and tunability of the dielectric constant suggests that Bi2O3–ZnO–Nb2O5 thin films have potential applications for integrated microwave components and decoupling capacitors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328408
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  • 5
    Electronic Resource
    Electronic Resource
    Electromechanical properties of thin strip piezoelectric vibrators at high frequency (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 394-397 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method was developed and used to determine the electromechanical properties of high frequency (〉20 MHz) piezoelectric strip vibrators. A nonlinear regression technique was employed to fit the impedance magnitude and phase as predicted by Mason's model to measured values. Results from experimental measurements on 30 MHz array elements supported by an attenuative backing indicated degraded performance when compared to values predicted from the electromechanical properties measured at low frequency. This degradation may be attributed to damage incurred during fabrication and grain size effects, with a fine grain sized material providing superior relative performance. This technique may be used in the evaluation and comparison of different fabrication processes and materials for high frequency medical imaging arrays. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373708
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  • 6
    Electronic Resource
    Electronic Resource
    E-field induced phase transition in 〈001〉-oriented rhombohedral 0.92Pb(Zn1/3Nb2/3)O3–0.08PbTiO3 crystals (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1080-1083 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: E-field induced phase transformation and associated changes in dielectric/piezoelectric properties of 〈001〉-oriented rhombohedral 0.92Pb(Zn1/3Nb2/3)O3–0.08PbTiO3 crystals were investigated. The longitudinal strain level was found to abruptly increase at 20 kV/cm, corresponding to that where an induced phase appears within a multidomain matrix. Decreases in the dielectric constant (K3T∼4000 to 500), transverse coupling (k31∼70% to 50%) and transverse piezoelectric coefficient (d31∼−1100 to −200 pC/N) associated with the induced phase were the result of increased crystal anisotropy. By contrast, the thickness coupling (kT) increased from 53% at 0 kV/cm to 64% at 45 kV/cm, associated with this phase transition. The measured dielectric and piezoelectric properties found for the induced phase state were nearly identical to those of 〈001〉 poled tetragonal (1−x)PZN−xPT (x〉0.1) crystals. Based on these results, it is evident that the symmetry of induced phase is tetragonal, 4 mm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369252
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  • 7
    Electronic Resource
    Electronic Resource
    Crystallographically engineered BaTiO3 single crystals for high-performance piezoelectrics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2746-2750 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric and piezoelectric properties of BaTiO3 single crystals polarized along the 〈001〉 crystallographic axes were investigated as a function of temperature and dc bias. Electromechanical coupling (k33)∼85% and piezoelectric coefficients (d33)∼500 pC/N, better or comparable to those of lead-based Pb(Zr, Ti)O3 (PZT), were found from 〈001〉-oriented orthorhombic crystals at 0 °C, as a result of crystallographic engineering. A rhombohedral BaTiO3 crystal polarized along 〈001〉 also exhibited enhanced piezoelectric performance, i.e., k33∼79% and d33∼400 pC/N at −90 °C, superior to PZTs at the same temperature. It was found that the crystal structure determined the (in)stability of the engineered domain state in BaTiO3 single crystals. Rhombohedral (3m) crystals at −100 °C exhibited a stable domain configuration, whereas depoling occurred in crystals in the adjacent orthorhombic phase upon removal of the E field. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371120
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  • 8
    Electronic Resource
    Electronic Resource
    Piezoelectric properties of zirconium-doped barium titanate single crystals grown by templated grain growth (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1657-1661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of Ba(ZrxTi1−x)O3 were grown by templated grain growth (TGG). Millimeter size single crystals of Ba(ZrxTi1−x)O3 were produced by heating a BaTiO3 crystal in contact with a sintered polycrystalline matrix of 4.5, 5.0, or 8.5 mol % Zr-doped barium titanate for 30 h at 1350 °C. To facilitate boundary migration, the ceramic compact was made 3 mol % TiO2 excess. The 4.5 and 5.0 mol % Zr-doped crystals were orthorhombic at room temperature, and for a pseudocubic (001) orientation, they showed remanent polarizations of 13 μC/cm2 and a high field d33 of 340–355 pC/N. The 8.5 mol % Zr-doped crystal [again oriented along the pseudocubic (001)] was rhombohedral at room temperature with a remanent polarization of 10 μC/cm2. A k33 value of 0.74 from resonance measurements was observed for the 4.5 mol % Zr-doped crystal. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370943
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  • 9
    Electronic Resource
    Electronic Resource
    A random-field model for polarization reversal in Pb(Yb1/2Nb1/2)O3–PbTiO3 single crystals (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6002-6006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarization switching and dielectric temperature behavior have been investigated in 0.55Pb(Yb1/2Nb1/2)O3–0.45PbTiO3 (PYN–PT) single crystals. These compositions are of interest owing to their unusually high Curie temperature and high coercive fields. The dielectric permittivity was determined as function of temperature and the polarization was measured as a function of applied field for different drive frequencies. Analysis of the experimental results with a random-field model was found to show similar trends to recent reports for the Pb(Mg1/3Nb2/3)O3 relaxor materials. The frequency dispersion of the maximum in dielectric spectra, Tmax, was also analyzed with the Vogel–Fulcher relation yielding a high freezing temperature of 577 K. Polarization behavior was found to follow a stretched exponential time dependence and a fractal dimension of ∼2.2 was obtained. It is proposed that the polar cluster state in PYN-PT single crystals do not freeze in random orientations but rather arrange locally in preferred configurations. The fraction of the clusters decreases under increasing external field drive, resulting in the formation of the percolated network at higher fields. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467399
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  • 10
    Electronic Resource
    Electronic Resource
    Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1804-1811 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The piezoelectric properties of relaxor based ferroelectric single crystals, such as Pb(Zn1/3Nb2/3)O3–PbTiO3 and Pb(Mg1/3Nb2/3)O3–PbTiO3 were investigated for electromechanical actuators. In contrast to polycrystalline materials such as Pb(Zr,Ti)O3, morphotropic phase boundary compositions were not essential for high piezoelectric strain. Piezoelectric coefficients (d33's)〉2500 pC/N and subsequent strain levels up to 〉0.6% with minimal hysteresis were observed. Crystallographically, high strains are achieved for 〈001〉 oriented rhombohedral crystals, although 〈111〉 is the polar direction. Ultrahigh strain levels up to 1.7%, an order of magnitude larger than those available from conventional piezoelectric and electrostrictive ceramics, could be achieved being related to an E-field induced phase transformation. High electromechanical coupling (k33)〉90% and low dielectric loss 〈1%, along with large strain make these crystals promising candidates for high performance solid state actuators. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365983
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