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  • 1
    Electronic Resource
    Electronic Resource
    The biosynthesis of astaxanthin-VII. The carotenoids in sea bream, Chrysophrys major Temminck and Schlegel
    Amsterdam : Elsevier
    Comparative Biochemistry and Physiology -- Part B: Biochemistry and 44 (1973), S. 253-257 
    Details
    ISSN: 0305-0491
    Keywords: Astaxanthin ; Chrysophrys major ; carotenoids ; lutein ; sea bream ; zeaxanthin
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0305-0491(73)90362-3
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  • 2
    Electronic Resource
    Electronic Resource
    Nonexponential proton relaxation in (NH"4)"2 HPO"4
    Amsterdam : Elsevier
    Physics Letters A 61 (1977), S. 341-343 
    Details
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(77)90636-3
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  • 3
    Electronic Resource
    Electronic Resource
    Dislocation bends in piezoelectric materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4794-4796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that J. Lothe's theorem [Philos. Mag. 15, 353 (1967)] is also valid for piezoelectric materials by replacing the energy factor. Its proof follows L. M. Brown's procedure [Philos. Mag. 15, 363 (1967)]. The forces on dislocation bends in lithium niobate are numerically calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353844
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  • 4
    Electronic Resource
    Electronic Resource
    Interaction characteristics of dislocations in strained epitaxial layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 179-183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In connection with nucleation and multiplication processes of misfit dislocations in epitaxial layers, elastic interactions of some configurations of dislocation surface half-loops and angular dislocations are investigated. By using the programme code produced by Gosling and Willis [J. Mech. Phys. Solid 42, 1199 (1994)], which calculates the image stresses of a straight dislocation half-line in a half-space and enables one to construct the stress field of any configuration of dislocation loops, the interaction energy of two surface half-loops is obtained. With the change of the relative positions of the two half-loops, the sign of the interaction energy varies from minus to plus, in accordance with which the interaction force between the two half-loops varies from an attractive force to a repulsive one. The interaction forces exerted on threading segments are also estimated for two angular dislocations, and their effects on the Matthews and Blakeslee equilibrium are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360928
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  • 5
    Electronic Resource
    Electronic Resource
    Comparative study of critical thicknesses of strained epitaxial layers based on the zero-energy criterion of dislocation half-loops (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5022-5027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Considering nucleation of dislocation half-loops from the crystal growth surface as a mechanism of generation of misfit dislocations between an epitaxial film and a substrate, critical thicknesses can be determined by calculating the zero of free energy of the system according to van de Leur et al.'s model [J. Appl. Phys. 64, 3043(1988)]. On estimating the free energy, two analytical methods are adopted; one is the whole-space approximation and another treats surface half-loops in the half-space by the image stress construction. In both of the methods, interaction between the two dislocation glide loops either lying in the identical slip plane or lying in the parallel slip planes are incorporated into the analysis. It is shown that half-loop correction reduces critical thickness, the former interaction reduces and the latter interaction increases it, and the interaction effects become smaller by the half-space correction. Finally, it is also shown that the effect of anisotropy in the whole-space approximation tends to increase critical thickness. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359729
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of anisotropy on the excess stress and critical thickness of capped Si1−xGex strained layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7842-7846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using the anisotropic image force theorem of Barnett and Lothe, single- and double-kink models for capped (buried) Si1−xGex strained layers are extended so as to take into account cubic anisotropy. The crystallographic configuration considered is such that the free surface is a (001) plane, misfit dislocation segments in the [11¯0] direction and threading dislocations in the [011] direction lie within a (1¯1¯1) glide plane, and the Burgers vector is 1/2[101]. The results show that the effect of cubic anisotropy is significant and that it tends to decrease the excess stress and to increase the critical layer thickness in both of the single- and double-kink models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356567
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  • 7
    Electronic Resource
    Electronic Resource
    Screened potential of a charged dislocation in piezoelectric semiconductors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8119-8121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified model is proposed for analyzing the electric potential around a charged dislocation in piezoelectric semiconductors. In the analysis of the order of the Debye length, the solution for the piezoelectric potential screened by the carriers and ionized impurities is obtained. Consideration of the electrostatic potential field near the dislocation complete the determination of the solution. Numerical calculations of the potential are made for GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347462
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  • 8
    Electronic Resource
    Electronic Resource
    Directional dependence of surface morphological stability of heteroepitaxial layers (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3141-3146 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface morphological stability in coherent heteroepitaxial layers is analyzed focusing on the directional dependence of surface undulations created by surface diffusion. The critical stability condition is defined in terms of the free energy of the system which is assumed to be the sum of the elastic strain energy and the surface free energy. The displacement and stress fields of the semi-infinite anisotropic solid with the slightly undulating surface are calculated by using the surface admittance tensor and the vector complex potential function. Numerical results for the Si1−xGex/Si systems show that the critical wavelength of the 〈100〉 surface undulations is smaller than that of the 〈110〉 surface undulations, which means that surface undulations are likely to be formed in the 〈100〉 directions. It is also found that the critical wavelength decreases with the increase of Ge fraction. These tendencies are in good agreement with the observations in annealing experiments for the Si1−xGex/Si systems in the literature. If the substrate is assumed to be rigid, the range of layer thickness where the system is absolutely stable against a surface undulation of any wavelength exists. Finally, the growth rate of the amplitude of surface undulations is estimated from an evolution equation for the surface shape. It is shown that even if anisotropy is taken into account, the growth rate of the amplitude takes the maximum value when the wavelength is 4/3 times the critical wavelength, which is the same as in the isotropic approximation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368468
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  • 9
    Electronic Resource
    Electronic Resource
    Elastic energy approach to the strain relaxation mechanism by dislocation splitting and slip in twist-bonded substrates (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5623-5629 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain relaxation mechanism by the splitting and slip of a cross grid of dislocations in a heteroepitaxial film on a thin twist-bonded substrate is analytically investigated by considering the energy change due to the slip of the dislocation arrays. In this mechanism, the dislocation arrays resulting from the splitting of a cross grid of screw dislocations in the interface between the twist-bonded substrate and the supporting bulk substrate move toward the interface between the heteroepitaxial film and the twist-bonded substrate so that the mismatch strain is relieved. The energy change consisting of the interaction energy between the dislocation arrays and their images and the interaction energy between the two split dislocation arrays is obtained in the semi-infinite isotropic elastic solid. If the initial screw dislocation arrays dissociate into two partial dislocation arrays, the stacking fault energy must be added in the energy change. The thickness of the twist-bonded substrate at the zero of the energy change becomes the critical thickness at which the strain relaxation mechanism can be operative. The results show that the strain relaxation due to the slip of 60° perfect dislocation arrays does not tend to occur while the strain relaxation due to the slip of 30° partial dislocation arrays is possible if the twist angle is low and if the thickness of the twist-bonded substrate is small. Whether this mechanism was possible in the experiments in the literature is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319170
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  • 10
    Electronic Resource
    Electronic Resource
    Strain profiles in pyramidal quantum dots by means of atomistic simulation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1191-1196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The minimum energy configurations of the atomic structure of a Ge island on a Si(001) substrate are calculated by using the conjugate gradient minimization of the potential energy of the system. The island is assumed to be covered or uncovered by a Si layer and assumed to be of pyramidal shape with the sidewalls of {110} or {105} facets; the base length of the island ranges from 5.43 to 10.9 nm. Two empirical potentials, the Keating and Stillinger–Weber potentials, are used. At the interfaces between the regions occupied by the atoms of different species, the potential parameters for such bondings are properly adopted. The strain profiles along the three selected paths within the structure and along the cap surface are calculated. While the profiles of the normal strain component εxx obtained by the two potentials are in good agreement with each other except within the substrate and at the edges of the island in the uncovered structures, the two profiles of the normal strain component εzz show a considerable difference in their magnitude, and the use of the Stillinger–Weber potential is recommended for the islands of the small sizes below 10 nm. The validity of the valence force field model with the Keating potential for such small islands is questionable although this model is widely recognized to be applicable to the calculation of strains in the quantum dot structures. The strain relaxation in the uncovered island is discussed through the comparison with that in the covered island. The strain profile along the cap surface explains vertical self-organization of stacked dots. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1335822
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