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  • 1
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Nano-sized TiO2 powders were prepared by controlled hydrolysis of TiCl4 and Ti(O-i-C3H7)4 solutions and nitrided in flowing NH3 gas at 700°–1000°C to form TiN. Nano-sized TiN was densified by spark plasma sintering at 1300°–1600°C to produce TiN ceramics with a relative density of 98% at 1600°C. The microstructure of the etched ceramic surface was observed by SEM, which revealed the formation of uniformly sized 1–2 μm grains in the TiCl4-derived product and 10–20 μm in the Ti(O-i-C3H7)4-derived TiN. The electric resisitivity and Vickers micro-hardness of the TiN ceramics was also measured.
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  • 2
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: TiN-coated Si3N4 particles were prepared by depositing TiO2 on the Si3N4 surfaces from Ti(O-i-C3H7)4 solution, the TiO2 being formed by controlled hydrolysis, then subsequently nitrided with NH3 gas. A homogeneous TiO2 coating was achieved by heating a Si3N4 suspension containing 1.0 vol% H2O with the precursor at 40°C. Nitridation successfully produced Si3N4 particles coated with 10–20 nm TiN particles. Spark plasma sintering of these TiN/Si3N4 particles at 1600°C yielded composite ceramics with a relative density of 96% at 25 vol% TiN and an electrical resistivity of 10−3Ω·cm in compositions of 17.5 and 25 vol% TiN/Si3N4, making these ceramics suitable for electric discharge machining.
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  • 3
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Whiskers of α- and β-Si3N4 were grown on or near a carbon black substrate, respectively, 10 mm downstream from a mixed starting powder of low-grade silica and carbon, in flowing nitrogen gas at 1400°C. The parameters (flowing nitrogen gas rate, growth time, grade of silica, and type of carbon) that promoted growth of the whiskers were examined in view of increasing the whisker yield. The shapes and sizes of both types of whiskers were observed by scanning electron microscopy (SEM). The separate growth of the whiskers is discussed here, based on X-ray diffraction analysis and SEM observation with energy-dispersive X-ray analysis.
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  • 4
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Early-stage thermal oxidation (below 1100°C) of carbothermally synthesized β-sialon powder was monitored by X-ray powder diffraction, solid-state 29Si and 27Al MAS NMR spectroscopy, and thermogravimetry. No crystalline oxidation products were detected by XRD but 29Si and 27Al MAS NMR indicated the early formation of amorphous silica, followed by the formation of an amorphous aluminosilicate with an atomic environment similar to that of mullite. The initial oxidation was described by a linear kinetic law with an activation energy of 170 kJmol−1, suggesting the rate-limiting step to be due to dissolution of O2 in an amorphous silica surface layer on the β-sialon particles.
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  • 5
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A plane-parallel, polished, 0.9 mm thick, single-crystal (001) plate of 2:1 mullite was treated for 6 h at 1600°C in an Ar/H2O (90/10) gas mixture at 100 kPa. Optical microscopy studies and infrared (IR) reflection spectroscopy studies of the lattice vibrations yielded no evidence for change with respect to the untreated reference crystal. However, IR absorption spectroscopy showed that structurally bound OH groups were formed by the heat treatment in the Ar/H2O gas mixture. IR absorption depth profile analysis showed a rather homogeneous OH distribution through the crystal. Five different hydroxyl groups were separated according to dipole orientations and peak positions: E‖a, ωa1= 3447 cm−1, ωa2= 3579 cm−1; E‖b, ωb1= 3456 cm−1, ωb2= 3544 cm−1; and E‖c, ωc1= 3498 cm−1. All IR peaks were strongly broadened (between 90 and 150 cm−1) because of a distribution in O-H binding distances caused by the real structure of mullite.
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  • 6
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A TiN precursor solution was synthesized by galvanostatic electrolysis of Ti metal and isopropylamine at a current density of 50 mA·cm−2 at room temperature. TiN films were prepared by dip-coating of the precursor solution on a Si wafer, followed by two-stage heat treatment at 400°C and a fixed temperature of 800–1200°C in flowing N2, N2/NH3, or NH3 gas. The TiN films were characterized by XRD, chemical analysis, XPS, and electrical resistivity measurements. The TiN films were composed of uniform grains 20 to 200 nm in size with thicknesses ranging from 300 to 400 nm at temperatures of 800–1200°C. The effect of the heat treatment atmosphere (N2 and NH3) on the impurity content, crystallinity, particle size, and electrical resistivity is discussed.
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  • 7
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 83 (2000), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The isothermal oxidation of the 200 face of HfC and TiC single crystals was performed at temperatures of 700°—1500°C and at oxygen pressures of 0.08—80 kPa for 4 h. The weight gain by oxidation of the two crystals was followed using an electromicrobalance. A polished cross section of the oxidized crystals was observed using backscattered electron imaging in a scanning electron microscope. Quantitative chemical analysis for Hf, Ti, O, and C was performed by wavelength-dispersive X-ray microanalysis. The early-stage oxidation kinetics of HfC crystals were described by the contracting volume equation, followed by slowed reaction in the latter stage, whereas the same equation was applied to the oxidation of TiC over the entire oxidation time. The preferred {200} orientation of monoclinic HfO2 occurred on the oxidized surface of the HfC crystal. The oxide scale on the HfC crystal consisted of a compact and pore-free black inner scale (zone 1) and a white/gray outer scale that contained many pores (zone 2). Zone 1 contained ∼25 at.% unoxidized carbon, and zone 2 contained 6—11 at.% carbon. The oxide scale of TiC was composed of an inner dense lamella subscale (zone 1) with a carbon content of 7—23 at.% and an outer region with laminations that was separated by pores and cracks (zone 2). The Ti3O5 phase, which exhibits a strong 020 line, was formed at depths of ≥40 μm in the scale obtained at 1500°C. Treatment with a concentrated HF solution allowed zone 1 to be separated from the HfC crystal in the form of carbon-containing films, which were characterized using Raman spectroscopy and transmission electron microscopy.
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Ceramic Society 80 (1997), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The isothermal oxidation of HfC single crystals with (100) orientation was carried out using an electromicrobalance at temperatures of 600° to 900°3C at an oxygen pressure of 2 to 8 kPa. Nonisothermal oxidation was performed by a simultaneous thermogravimetry—differential thermal analysis—mass spectrometry analysis. A polished cross section of the oxidized crystal was observed by backscattered electron imaging in a scanning electron microscope. Quantitative chemical analysis for Hf, O, and C and their elemental profiles in the HfC and oxide scale was carried out by wavelength dispersive X-ray microanalysis. It was found that the oxide scale consists of two regions, zones 1 and 2, both of which showed the existence of carbon. The carbon content at the middle point of zone 1 was about twice that in zone 2, which contained 7 to 14 at.% carbon. Zone 1 showed an almost compact and pore-free phase; its thickness remained constant (1 to 2 μm) after a prolonged time. The thickness of zone 2 increased linearly with time. The oxidation mechanism including interfacial reaction responsible for the deposition of carbon is discussed.
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Oxidation of SiC compositionally graded (SCGed) graphite coated with HfO2 derived from HfCl4 by a sol–gel process was performed at 1500° and 1600°C in a flowing gas mixture of Ar and O2 (80/20 kPa). SCGed graphite was produced by reaction of graphite with either molten Si or SiO gas at 1450°C. The sol–gel-derived HfO2 precursor was deposited on SCGed graphite by a dip-coating method. Isothermal and cyclic oxidation of uncoated- and HfO2-coated SCGed graphite was studied by monitoring overall weight change using an electro-microbalance. Scanning electron microscopy with energy-dispersive X-ray analysis was used to observe the surfaces and cross-sections of the oxidized HfO2-coated SCGed graphite. The formation of HfSiO4 was confirmed on the outer layer of the oxidized sample, beneath which a thin silica layer was formed. The improved oxidation resistance of SCGed graphite by coating with HfO2 is discussed on the basis of the formation of these two layers.
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 97 (1993), S. 8803-8807 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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