ISSN:
1573-1979
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
Notes:
Abstract A unified single-equation approach for the MOS transistordrain current modeling for energy-efficient submicron MOS circuitsis presented. Instead of three sets of separate equations forthe triode, saturation, and weak inversion regions, only a continuousexpression which is valid to describe the behavior of drain currentand the derivatives in all operation regions can be realizedby using a combination of hyperbola, sigmoid, and interpolationmethods. The model expression can predict accurate results forthe current, output conductance, and transconductance with continuousand smooth characteristics. The simulation results agree wellwith experimental data.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008212908346
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