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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 162-164 (1989), S. 454-455 
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 162-164 (1989), S. 456-457 
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 158 (1991), S. 413-416 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 788-790 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline SrBi2Ta2O9 (SBT) ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates by metalorganic decomposition. Electric measurements demonstrate that fatigue increases with decreasing switching voltage and frequency, and the suppressed polarization caused at a lower switching voltage can be recovered by switching at a higher voltage. This suggests that the domain walls of SBT thin films are weakly pinned and easily depinned by a higher external field. The polarization of SBT thin films annealed in air shows more degradation than that annealed in oxygen, which indicates that the oxygen vacancy also plays an important role in fatigue behavior of SBT thin films. © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1746-1749 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline SrBi2Ta2O9 (SBT) ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates by the metalorganic decomposition technique. The SBT crystalline phase appeared at 550 °C, completely crystallized at 650 °C, and little pyrochlore phase was observed in the x-ray diffraction patterns. The grains, which are rodlike, increased from about 50 to 200 nm in diameter with increasing annealing temperature from 550 to 800 °C. Typically, the SBT thin film annealed at 750 °C had Pr=8.8 μC/cm2 and Ec=29.3 kV/cm at applied voltage of 5 V, and the hysteresis loops become saturated with an increase of the maximum applied voltage. The fatigue and retention characteristics of SBT thin films dependence on applied voltage and frequency have also been investigated. It revealed that the fatigue endurance at a higher frequency and a higher applied voltage could be better than that at a lower frequency and a lower applied voltage. The retention properties of the SBT thin films are quite good over a range of 1–10 000 S, and the influence of applied voltage and bias voltage is not obvious. © 1999 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3674-3676 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline SrBi2Ta2O9 (SBT) ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates by metalorganic decomposition. Electric measurements demonstrate that the polarization decay increases with increasing the write/read voltage within the first second. This could be attributed to the depolarization fields, which increases with increasing the retained polarization. However, we found that the polarization loss is insignificant with different write/read voltages over a range of 1–30 000 S. Furthermore, experiment indicates that there is weak pinning of domain walls existing in SBT, which plays an important role for SBT thin film over a range of 1–30 000 S with a low write/read voltage. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2656-2658 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structures and defects induced during annealing were studied in free-standing NiTi thin films produced by rf magnetron sputtering. Ni4Ti3 precipitates coherent with the (B2) matrix do not affect the shape memory behavior of the thin films annealed at 550 °C for short times. With the further increase of the annealing time and/or temperature, less coherent Ni4Ti3 precipitates develop and hinder the shape memory behavior. The embrittlement of the annealed films probably results from grain–boundary precipitation, thermal etching, and stress gradients. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3417-3419 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction and dielectric measurement have been applied to investigate the phase transition and transport properties of Sr0.56C60O1.5 which is obtained by the reaction of SrCl2 with C60 anion aquatic solution. The new compound has a similar structure, but different transport properties as compared with metallic Sr-doped C60. X-ray diffraction shows that a first-order phase transition around 100 °C is related to the rearrangement of Sr2+ in the interstitial sites of the C60 lattice. The step change of ac conductivity near 100 °C is also attributed to the hopping of Sr2+ between interstitial sites. The ionic conductivity indicates the possibility of synthesizing superionic conductors based on C60 and its derivatives. © 1995 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of plant growth regulation 15 (1996), S. 27-31 
    ISSN: 1435-8107
    Keywords: Ipomoea batatas (L.) Lam ; Calonyction aculeatum (L.) House ; Growth regulation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Calonyctin, a natural plant growth regulator extracted from the leaves of Calonyction aculeatum (L.) House, can promote crop growth and increase crop yield. The specific reasons for this response are unknown. This study was conducted to determine the effect of calonyctin treatment on the free sugars of sweet potato [Ipomoea batatas (L.) Lam.] as related to starch accumulation. The sweet potatoes were grown in the field in 1992, treated by foliar spray with Calonyctin concentrations of 0 (control) and 0.1 activity unit (CTSP) at 20 days after planting (DAP) at the rate of 190 liters of diluted solution/ha., and sampled periodically to determine free sugars. The response of sweet potato to calonyctin was first detected at 40 days after treatment (on 60 DAP). Data indicated that calonyctin treatment significantly increased starch synthesis in storage roots, decreased the fluctuation tendency of total sugar level during the growth period, and kept the sugar level relatively constant with a gradual rise regardless of variations in weather. The level of the reducing sugars in CTSP leaves was higher at 60 and 160 DAP and lower at 100, 120, and 140 DAP. During rainy days (100 DAP), the reducing sugars in CTSP storage roots remained at a lower level when those in controls reached high levels. The sucrose content in CTSP leaves was 40–138% greater than that in controls except at 80 and 120 DAP, and the ratio of sucrose to total nonreducing sugars remained at 100% in CTSP leaves even on rainy and cool days and above 96% in CTSP storage roots except on cool days (140 and 160 DAP), suggesting that calonyctin treatment promoted the synthesis and transfer of sucrose and supplied abundant sugar precursors for starch accumulation in storage roots.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 96 (1994), S. 347-353 
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Internal friction and dielectric loss measurements, x-ray diffraction analysis and tensile tests as a function of temperature were carried out in CuO. Data from the experiments show that no phase transition or phase-like transition occurs between 90 K and 160 K instead, in this temperature range both internal friction and dielectric loss measurements display a relaxation peak with an activation of 0.23±0.01 eV. It is concluded that the behaviour of the high Tc superconductors with Tc 〉 80 K is not related to CuO.
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