ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Negative SU-8 photoresist processed at several levels of lower temperature thanconventional approach was investigated, and its low-temperature processing has been characterizedin terms of delamination. According to two phases of statistical design of experiment (DOE), initiallystatistically significant variables of SU-8 photoresist processing were selected, and the selectedvariables were further investigated to find their effects on delamination of SU-8 microstructure. Athree leveled factorial designed experiments were performed followed by a 2(6-1)fractional factorialdesigned as a screening experiment. Characterizing low-temperature SU-8 photoresist process, 27samples were fabricated and the degree of delamination was measured. In addition, nine additionalsamples were fabricated for the purpose of verification. Employing a neural network modelingtechnique, a process model is established, and response surfaces are generated to investigate thedegree of delamination associated with three process parameters: post exposure bake (PEB)temperature, PEB time, and exposure energy. From the response surfaces generated, two significantparameters associated with delamination are identified, and their effects on delamination wereanalyzed. The higher the post exposure bake (PEB) temperature at a fixed PEB time and the moredelamination occurred. In addition, the higher the dose of exposure energy, the lower the temperatureat which the delamination begins and the larger the degree of delamination. The results identifiedacceptable ranges of the three process variables to avoid the delamination of SU-8 film, which in turnmight lead to potential defects in MEMS device fabrication
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/54/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.345-346.1397.pdf
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