Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 2748-2750
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Secondary ion mass spectroscopy (SIMS) and Fourier transform infrared (FTIR) absorption have been studied in thin oxides of Si1−xGex grown by plasma oxidation. SIMS analysis reveals that Ge can migrate to the oxide film surface leaving the oxide in the SiGe interface region Ge-depleted. This is in contrast to thermally grown oxides. Water selectively attacks the Ge-rich part of the oxide. In the FTIR spectra of the SiGe oxides, specific peaks identified with the vibration of O in Si–O–Ge and Ge–O–Ge bonds have been observed for the first time. These latter observations confirm that for the plasma oxidized films, the Ge is chemically bonded in the oxide network. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121078
Permalink
|
Location |
Call Number |
Expected |
Availability |