ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report a systematic experimental study of the transient reflectivity of low-temperature grown GaAs as a function of excitation wavelength, excitation density, and lattice temperature. We observe that the reflectivity decay is temperature independent for excitation energies between 20 and 70 meV above the band gap of GaAs. Under this condition the reflectivity increases linearly with excitation density and is in very good quantitative agreement with the Drude model. Subsequently, we present a model which allows the extraction of the diameter and density of As clusters in low-temperature grown GaAs from the reflectivity decay. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1430886
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