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  • 1
    Publication Date: 2019-07-19
    Description: Heavy metal Selenide has been investigated for more than half century for high operating temperature (HOT) mid wave infrared (MWIR) applications. Most of the efforts have been devoted to make detector arrays on high-resistivity Si substrates for operating wavelengths in the 1.5 to 5.0 m region using physical vapor transport grown poly crystalline materials. For most of the biological spectral and imaging applications, short wave infrared (SWIR) detectors have shown better performance. Recent growth materials have shown variation in morphology with slight change in growth conditions and hence variation in performance parameters such as bandgap, mobility and resistivity from sample to sample. We have performed growth and optical characterization of pure and doped PbS and PbSe and have determined bandgap using available theoretical models for different morphologies.
    Keywords: Engineering (General)
    Type: M18-6488 , SPIE (Defense + Commercial Sensing and Imaging); Apr 15, 2018 - Apr 18, 2018; Orlando, FL; United States
    Format: application/pdf
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  • 2
    Publication Date: 2019-07-13
    Description: There is a strong need for rad hard and high operating temperature IR detectors for space environment. Heavy metal Selenides (high Z and large density) have been investigated for more than half century for high operating temperature mid wave infrared (MWIR) applications. Most of the efforts have been devoted to make detector arrays on high-resistivity Si substrates for operating wavelengths in the 1.5 to 5.0 m region using physical vapor transport grown poly crystalline materials. For most of the biological spectral and imaging applications, short wave infrared (SWIR) detectors have shown better performance. Recent growth materials have shown variation in morphology with slight change in growth conditions and hence variation in performance parameters such as bandgap, mobility and resistivity from sample to sample. We have performed growth and optical characterization of binary materials CdSe-PbSe to determine the suitability for IR detector. We have determined bandgap using several theoretical models for different morphologies observed during growth on silicon wafers.
    Keywords: Chemistry and Materials (General)
    Type: M19-7344 , SPIE Defense + Commercial Sensing; Apr 14, 2019 - Apr 18, 2019; Baltimore, MD; United States
    Format: application/pdf
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