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  • 1
    Electronic Resource
    Electronic Resource
    Layer growth mechanism and dipole–dipole interactions of CH3Cl on Pd(100): An infrared and thermal desorption study (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 8300-8305 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Fourier transform infrared spectroscopy (FTIRS) and temperature programmed desorption (TPD) have been used to study the layer growth mechanism of CH3Cl on a Pd(100) surface at 85 K. Methyl chloride adsorbs and desorbs in molecular form without decomposition. Three different adsorbed states are readily distinguishable by both methods. The chemisorbed state (first layer) saturates at aitch-theta =0.5 coverage, with the characteristic C–H vibrations of 1011, 1330, 1426, 2927 cm−1. The desorption spectrum for this state suggests a coverage-dependent activation energy between 54.5 and 42 kJ/mol. Nearly the same amount of CH3Cl is bonded in the physisorbed state (second layer) with characteristic C–H vibrations at 1013, 1338, 1428, and 2925 cm−1. The activation energy of the desorption in this case is 40–35 kJ/mol. The condensation phase appears only after the completion of the first two layers and exhibits characteristic C–H vibrations at 1023, 1338/1346, 1444, and 2955 cm−1. In a model calculation {developed by Albano [J. Chem. Phys. 86, 1044 (1986)]} it is shown, that the intermolecular dipole–dipole interaction may explain correctly the coverage- dependent activation energy for desorption of methyl chloride.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459312
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  • 2
    Electronic Resource
    Electronic Resource
    Luminescence decay of porous silicon
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 185 (1993), S. 603-607 
    Details
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4526(93)90303-N
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  • 3
    Electronic Resource
    Electronic Resource
    Prostaglandin A"1 and E"1 inhibit the plating efficiency and proliferation of murine melanoma cells (Cloudman S-91) in soft agar
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 104 (1982), S. 1080-1086 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0006-291X(82)91360-2
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  • 4
    Electronic Resource
    Electronic Resource
    The Price of Energy (1976)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Environment and Resources 1 (1976), S. 391-421 
    Details
    ISSN: 0362-1626
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.eg.01.110176.002135
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  • 5
    Electronic Resource
    Electronic Resource
    A simple technique to measure stress in ultrathin films during growth (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4734-4735 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We demonstrate an easy implementation of the cantilever bending beam approach to measure stress during film growth in ultrahigh vacuum. Using a simple and compact optical deflection technique, film stress with sub-monolayer sensitivity can be detected. A stress measurement during FeSi2 formation on Si(111) is presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145316
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetoelastic coupling in Ni and Fe monolayers on Cu(001) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5920-5922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correlation between mechanical stress and magnetic anisotropy of Ni and Fe films on Cu(001) is investigated. The magnetoelastic coupling and the film stress during the growth are measured in situ with a highly sensitive optical bending beam technique. For Ni a dramatically reduced magnetoelastic coupling of B1=3.5 MJ/m3 is found for films thinner than 10 ML, roughly one third of the bulk value of 9.4 MJ/m3. This change is explained by a strain correction to the magnetoelastic coupling. The influence of the interfaces does not significantly contribute to the magnetoelastic coupling. A very small magnetoelastic coupling of 0.4 MJ/m3 for Fe films in the range from 12 ML to 25 nm is attributed mainly to the crystallographic orientation of the bcc–Fe. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372567
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  • 7
    Electronic Resource
    Electronic Resource
    Ultrahigh vacuum cantilever magnetometry with standard size single crystal substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1495-1501 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A cantilever magnetometer is described that measures the magnetic moment of ferromagnetic films with submonolayer sensitivity. The magnetometer is incorporated into an ultrahigh vacuum chamber for sample preparation and in situ magnetometry. Standard size single crystals of 5 mm diameter and 2 mm thickness can be used, which are mounted on thin sheet metal. This composite sampleholder works as a cantilever when the bending is induced by the torque exerted by an external magnetic field on a monolayer ferromagnetic film deposited onto the single crystal substrate. We demonstrate the submonolayer sensitivity on Fe monolayers on Cu(100) in the thickness range from 2 to 68 monolayers. The sample holder is designed for internal calibration by passing a current through it and exploiting the well-known current induced magnetic moment. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1340560
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  • 8
    Electronic Resource
    Electronic Resource
    Strain dependence of the magnetic properties of nm Fe films on W(100) (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5279-5281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness dependence of the magneto-elastic coupling B1, the intrinsic film stress, and the magnetic in-plane anisotropy K4 of Fe films on W(100) are measured with an in situ combination of a highly sensitive optical deflection technique with magneto-optical Kerr-effect measurements. We find that both B1 and K4 depend strongly on the Fe film thickness. The thickness dependence of B1 can be described by considering a second order magneto-elastic coupling constant D=1 GJ/m3 as a strain dependent correction of B1. We tentatively ascribe the deviation of K4 from its bulk value to the tetragonal lattice distortion caused by an effective tensile in-plane strain of 5.3% in the pseudomorphic region and of 0.2% in thicker films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369854
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  • 9
    Electronic Resource
    Electronic Resource
    Stress evolution during the growth of ultrathin layers of iron and iron silicide on Si(111) (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1833-1835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a simple optical deflection technique, we measured continuously the mechanical stress during the growth of Fe films of 0.1–1.5 nm thickness on Si(111) in ultrahigh vacuum (UHV). The stress versus coverage dependence is discussed in view of the different growth modes during the various stages of Fe deposition. The deposition of up to 0.3 nm Fe induces a compressive stress of −1 N/m. We assign this stress to the formation of a reactive Fe–Si interface layer with a silicidelike structure. Subsequent Fe deposition at 300 K leads to a small tensile stress of 0.7 N/m, whereas the deposition at 600 K induces a high tensile film stress of 18 N/m. At 600 K substrate temperature, a solid-state reaction between Fe and Si sets in, and the silicide β-FeSi2 is formed. The decrease of the atomic volume of Si by 7% in this silicide is proposed to be the cause for the tensile stress. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115418
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  • 10
    Electronic Resource
    Electronic Resource
    Structure and perpendicular magnetization of Fe/Ni(111) bilayers on W(110) : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4702-4704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy and low energy electron diffraction show that high quality fcc Ni(111) films can be prepared on W(110). The subsequent coverage of this Ni template by monolayers of Fe leads to a Fe/Ni bilayer with striking magnetic properties. The Fe cap layer induces a spin reorientation of the easy axis of magnetization from in-plane to perpendicular to the film, as checked with the magneto-optic Kerr effect. At higher Fe coverages, an in-plane magnetization of the bilayer is found, which is proposed to be caused by the fcc to bcc transition in the Fe layer.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365532
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