Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 3387-3389
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The spatial variation of stress and crystal orientation in laser-crystallized silicon-on-insulator films has been determined using the Raman-microprobe technique. The spatial resolution achieved is better than 1 μm. The phonon shift relative to unstressed silicon is in the range of −1.5 cm−1 which corresponds to a tensile stress of 380 MPa and is in good agreement with theoretical analysis. Using a laser plasma line as an online reference, the peak position of the phonon signal has been measured with a resolution better than ±0.02 cm−1. Our results also show a 4°-backward tilt of the crystal orientation along a crystallization path length of 90 μm. This has been determined using a new polarization sensitive intensity-monitoring method on cross-cut specimens which features an angular resolution of ±1° independent of surface roughness.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348516
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