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  • 1
    Electronic Resource
    Electronic Resource
    Electron impact excitation of the 3p(5P) state of atomic oxygen (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 1999-2002 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The 157.6 nm output from a fluorine excimer laser is focused in a vacuum chamber containing O2 gas at a pressure of 20 mTorr. Laser photodissociation of the O2 target gas produces 2p4(3P) and 2p4(1D) oxygen atoms with unit quantum efficiency. A low-energy electron beam is crossed with the laser beam to produce 3p(5P) excited states of OI via electron impact excitation of the 2p4(3P) ground state. Intensity measurements of the 777.4 nm radiation, corresponding to the 3p(5P)–3s(5S) transition, are used to calculate the excitation cross section of the 3p(5P) state of atomic oxygen. Absolute optical cross sections are reported for a range of incident electron energies less than 18 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455098
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  • 2
    Electronic Resource
    Electronic Resource
    Control of size and density of InAs/(Al, Ga)As self-organized islands (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 481-487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the influence of the chemical composition of the (Al, Ga)As surface on the formation of strain induced three-dimensional (3D) InAs islands. The experiments have been carried out using a molecular beam epitaxy facility combined with a scanning tunneling microscope enabling in situ surface characterization. The evolution of the density and morphology of these islands is investigated as a function of the Al composition. The InAs deposition, substrate temperature, and annealing time effects on the island formation and morphology are studied. The morphologies of the (Al, Ga)As surface as well as that of the reconstructed InAs "wetting layer" are also described. Results indicate that there are major differences between the InAs/GaAs and the InAs/AlAs systems despite the same lattice mismatch. We observe these differences varying the aluminum content in the starting (Al, Ga)As surface. We show that control of the Al fraction leads to control of the size and density of the 3D islands. The control of island density and size as well as the growth mode of these islands is explained by considering the difference in surface mobility and cation intermixing between these two systems. Our observation is that strain energy is not the only parameter governing the formation of 3D islands but the chemical nature of the different layers involved is proved to significantly affect island properties. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357784
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetization of HgBa2CuO4+δ with 0.03≤δ≤0.4 : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6580-6582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: HgBa2CuO4+δ (Hg1201) samples with 0.03≤δ≤0.4 have been obtained. The magnetization of the powdered Hg1201 samples was determined using a Quantum Design SQUID magnetometer. It was observed that while the magnetization of Hg1201 increased with δ in the underdoped region, the magnetization decreased with δ in the overdoped region. These results suggest an increase of ns/m* with oxidation in the underdoped region and a decrease in the overdoped region, similar to that reported in underdoped HTSs and overdoped Tl2201 and Tl1201. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361951
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial Tl2Ba2CaCu2O8 superconducting thin film on Sr2(AlTa)O6 buffer layer (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6846-6848 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Tl2Ba2CaCu2O8 superconducting films have been successfully grown on the dielectric Sr2(AlTa)O6 (SAT) buffer layers. X-ray diffraction data showed that the films were highly c-axis oriented with a rocking curve full width half maximum as narrow as 0.3°. The films also had an excellent in-plane epitaxy with Tl2Ba2CaCu2O8[100] aligned with SAT[100] and MgO[100] of the substrate. The zero resistance temperature Tc of the superconducting films ranged from 95 to 103 K and the transport critical current density Jc in zero field was 3×105 A/cm2 at 77 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360446
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  • 5
    Electronic Resource
    Electronic Resource
    Sputter-deposited yttrium–barium–copper–oxide multilayer structures incorporating a thick interlayer dielectric material (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2003-2005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Physical vapor deposition technologies have been developed which allow the fabrication of multilayer structures consisting of two yttrium–barium–copper–oxide (YBa2Cu3O7−x or YBCO) layers separated by a thick (∼4 μm), low dielectric constant material. The YBCO is buffered from both the substrate and the other films with ion-beam assisted deposited (IBAD) films of yttria-stabilized zirconia (YSZ). The YSZ layer provides both the texture necessary to deposit high-quality YBCO films and protection from the insulating layer material. Using these deposition processes, a variety of materials, such as Pyrex and Haynes alloy, may be used for the substrate. The critical temperature and current values obtained for the two YBCO layers of the completed structure were on the order of 85 K and 2×105 A/cm2, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361052
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial Sr2(AlTa)O6 films as buffer layers on MgO for YBa2Cu3O7−x thin film growth (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2138-2140 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sr2(AlTa)O6 thin films (2000–3000 A(ring)) have been deposited on MgO (001) substrates using pulsed laser deposition (PLD). X-ray-diffraction analysis shows that the Sr2(AlTa)O6 grows with the c axis highly oriented normal to the substrate plane and very good in-plane epitaxy. The subsequently deposited YBa2Cu3O7−x films using PLD on Sr2(AlTa)O6 buffered MgO substrates exhibit excellent epitaxial growth with a narrow rocking curve width and a small φ scan peak width. The critical temperature Tc0 of 90–92 K has been achieved reproducibly and the critical current density is over 2.7×106 A/cm2 at 77 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360197
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic field and temperature dependence of critical current densities in multilayer YBa2Cu3O7−δ films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6593-6595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to build high-temperature superconductor (HTS) multichip modules (MCMs), it is necessary to grow several epitaxial layers of YBCO that are separated by thick dielectric layers without seriously affecting the quality of the YBCO layers. In this work, we have successfully fabricated YBCO/YSZ/SiO2/YSZ/YBCO structures on single-crystal LaAlO3 substrates using a combination of pulsed laser deposition for the YBCO layers and ion-beam-assisted rf sputtering to obtain biaxially aligned YSZ intermediate layers. The bottom YBCO layer had a Tc∼89 K, Jc∼7.2×105 A/cm2 at 77 K, whereas the top YBCO layer had a Tc∼86 K, Jc∼6×105 A/cm2 at 77 K. The magnetic field and temperature dependence of Jc for the YBCO films in the multilayer have been obtained. The results for each of the YBCO layers within the YBCO/YSZ/SiO2/YSZ/YBCO structure are quite similar to those for a good quality single-layer YBCO film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361884
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  • 8
    Electronic Resource
    Electronic Resource
    Superconducting TlSr2(Ca,Cr)Cu2O7 thin films with critical current density up to 106 A/cm2 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4259-4261 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting TlSr2(Ca,Cr)Cu2O7 thin films with zero resistance temperature Tc up to 102 K and critical current density Jc as high as 106 A/cm2 at 77.7 K have been successfully prepared via laser ablation and thallium diffusion. Prolonged low temperature annealing in air was used for film processing. X-ray diffraction patterns indicated that the films were highly oriented 1212 phase with c axes normal to the LaAlO3(100) or MgO(100) substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354440
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  • 9
    Electronic Resource
    Electronic Resource
    Formation of quantum wires and dots on InP(001) by As/P exchange (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7871-7874 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2×4 surface with a length of over 1 μm and flat top 2×4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2×4 to 4×2 and the nanowires transform into dots with a rectangular base and flat top. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372622
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  • 10
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy investigation of truncated InP/GaInP2 self-assembled islands (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3406-3408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an investigation of the morphology of InP/GaInP three-dimensional (3D) islands obtained by molecular beam epitaxy. This material system should represent the counterpart of the InGaAs/GaAs system for the visible range. The islands are found to be truncated pyramids with observable phosphorous-rich surface reconstruction on top. The investigation of the effect of P overpressure reveals a path to achieve extremely homogeneous 3D islands through an island shape transition. These results help us understand the emerging issue of 3D island shape transition. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326836
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